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Addressing crosstalk in crossbar memory arrays with a resistive switching ZnO homojunction diode

机译:使用电阻切换ZnO同性氮二极管在横杆存储器阵列中寻址串扰

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摘要

A resistive switching ZnO n-n homojunction diode fabricated with a stack of two dissimilar ZnO thin films shows promising characteristics necessary to address the crosstalk problem in a crossbar memory array. The device has a characteristic Ⅰ-Ⅴ-hysteresis loop in forward bias, in conjunction with its n-n junction characteristics. In the ac frequency range of 10 Hz-15 kHz, the area inside the hysteresis loop initially increased, reaching a maximum at 1 kHz, and then decreased with increasing frequency. The maximum in the area of the hysteresis loop corresponds to the accumulation of space charge at the interface. The resistivity of the device was found to vary from 5 to 100 kΩ in the bias range of 0-10 V and in the range of 10~6 Ω. when reverse biased; the ratio of high resistive state to low resistive state has its maximum (~2.4) at 1 kHz ac signal at 3 V.
机译:用两种不同的ZnO薄膜堆叠制造的电阻式切换ZnO N-N同质结二极管,示出了在横杆存储器阵列中解决串扰问题所需的有希望的特性。 该装置具有在正向偏压中具有特性Ⅰ-α-滞后环,结合其N-n结特性。 在10Hz-15 kHz的交流频率范围内,滞后回路内的区域最初增加,达到1kHz的最大值,然后随着频率的增加而降低。 滞后回路区域中的最大值对应于接口处的空间电荷的累积。 发现装置的电阻率在0-10V的偏置范围内的5至100kΩ之间变化,范围为10〜6Ω。 当反向偏见时; 高电阻状态与低电阻状态的比率在3 V的1 kHz AC信号中具有其最大(〜2.4)。

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  • 来源
    《Journal of Applied Physics》 |2021年第20期|205106.1-205106.10|共10页
  • 作者单位

    Department of Physics Oklahoma State University Stillwater Oklahoma 74078 USA;

    Department of Physics Western Mindanao State University Normal Road Baliwasan Zamboanga City 7000 Philippines;

    Department of Physics Oklahoma State University Stillwater Oklahoma 74078 USA;

    Department of Physics Oklahoma State University Stillwater Oklahoma 74078 USA;

    Department of Physics PSG College of Technology Coimbatore 641 004 India;

    Department of Physics Oklahoma State University Stillwater Oklahoma 74078 USA;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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