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首页> 外文期刊>Journal of Applied Physics >Influence from the electronic shell structure on the range distribution during channeling of 40-300 keV ions in 4H-SiC
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Influence from the electronic shell structure on the range distribution during channeling of 40-300 keV ions in 4H-SiC

机译：4H-SIC在40-300 keV离子的信道中的电子壳结构对电子壳结构的影响

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摘要

Ion implantation is performed in 4H-SiC with ~(11)B,~(27)Al,~(31)P,~(51)V,~(71)Ga,and ~(75)As ions using energies between 40 and 300 keV at various fluences along the [000-1] or the (11-2-3) axes. Secondary ion mass spectrometry is utilized to determine the depth distribution of the implanted elements. A Monte Carlo binary collision approximation (MC-BCA) code for crystalline targets is then applied to explain the influence of the electronic shell structure on electronic stopping and the obtained channeled ion depth distributions. The results show that,as the atomic number increases in a row of the periodic table,i.e.,as the ionic radius decreases and the electron clouds densify,the interaction with the target electrons increases and the range is reduced. The decreased range is particularly pronounced going from ~(27)Al to ~(31)P. The reduction in channeling depth is discussed in terms of electronic shells and can be related to the ionic radii,as defined by Kohn-Sham. It is shown that these shell effects in channeled implantations can easily be included in MC-BCA simulations simply by modifying the screening length used in the local treatment of electronic stopping in channels. However,it is also shown that,for vanadium ions with an unfilled d-shell,this simple model is insufficient to predict the electronic stopping in the channels.
机译：在4H-SiC中进行离子注入，用〜（11）B，〜（27）A1，〜（31）p，〜（51）v，〜（71）Ga，〜（75），以及在40之间的电能之间的离子沿[000-1]或（11-2-3）轴的各种流量，300kev。二次离子质谱法用于确定植入元件的深度分布。然后应用晶体靶标的蒙特卡罗二进制碰撞近似（MC-BCA）代码以解释电子壳结构对电子停止和所获得的通道离子深度分布的影响。结果表明，随着原子数在周期表的一行中增加，即，随着离子半径减小并且电子云致密，与目标电子的相互作用增加并且该范围减小。降低的范围从〜（27）Al至〜（31）p中特别明显。在电子壳方面讨论了信道深度的降低，并且可以与离子半径有关，如Kohn-Sha。结果表明，通过修改在通道中的电子停止的局部处理中使用的筛选长度，可以简单地将这些壳体效应容易地包括在MC-BCA模拟中。然而，还示出了，对于具有未填充的D-壳的钒离子，这种简单的模型不足以预测通道中的电子停止。

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  • 来源
    《Journal of Applied Physics》 |2021年第7期|075701.1-075701.10|共10页
  • 作者

    M.K.Linnarsson; L.Vines; A.Hallen;

  • 作者单位

    Materials and Nano-Physics Department of Applied Physics SCI KTH Royal Institute of Technology SE-106 91 Stockholm Sweden;

    Physics Department/Center for Materials Science and Nanotechnology University of Oslo P.O. Box 1048 Blindern N-0316 Oslo Norway;

    School of EECS KTH Royal Institute of Technology Electrum 229 SE-164 40 Kista Sweden;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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