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首页> 外文期刊>Journal of Applied Physics >High-resolution radiation detection using Ni/SiO_2/n-4H-SiC vertical metal-oxide-semiconductor capacitor
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High-resolution radiation detection using Ni/SiO_2/n-4H-SiC vertical metal-oxide-semiconductor capacitor

机译：使用Ni / SiO_2 / N-4H-SiC垂直金属氧化物半导体电容的高分辨率辐射检测

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摘要

In this article,we demonstrate the radiation detection performance of vertical metal-oxide-semiconductor (MOS) capacitors fabricated on 20μm thick n-4H-SiC epitaxial layers with the highest energy resolution ever reported. The 100 nm SiO_2 layer was achieved on the Si face of n-4H-SiC epilayers using dry oxidation in air. The Ni/SiO_2/n-4H-SiC MOS detectors not only demonstrated an excellent energy resolution of 0.42% (AE/E×100) for 5.48 MeV alpha particles but also caused a lower enhancement in the electronic noise components of the spectrometer compared with that observed for the best high-resolution Schottky barrier detectors. The MOS detectors also exhibited a high charge collection efficiency (CCE) of 96% at the optimized operating bias despite the presence of the oxide layer. A drift-diffusion model applied to the CCE vs gate bias voltage data revealed a minority (hole) carrier diffusion length of 24μm. Capacitance mode deep level transient spectroscopy (C-DLTS) scans in the temperature range 84-800 K were carried out to identify the resolution limiting electrically active defects. Interestingly,the C-DLTS spectra revealed both positive and negative peaks,indicating the simultaneous presence of electron (majority) and hole (minority) trap centers. It has been inferred that at the steady-state bias for the C-DLTS measurement,the MOS detector operates in the inversion mode at certain device temperatures,causing holes to populate the minority trap centers and,hence,manifests minority carrier peaks as well.
机译：在本文中，我们展示了在20μm厚的N-4H-SiC外延层上制造的垂直金属氧化物半导体（MOS）电容器的辐射检测性能，其具有最高的能量分辨率。在空气中使用干氧化在N-4H-SiC脱落剂的Si面上实现了100nm SiO_2层。 NI / SIO_2 / N-4H-SIC MOS检测器不仅证明了5.48MeVα颗粒的0.42％（AE / E×100）的优异能量分辨率，而且与这对于最好的高分辨率肖特基障探测器观察到。尽管存在氧化物层，MOS检测器在优化的操作偏压下也表现出96％的高电荷收集效率（CCE）。应用于CCE的漂移扩散模型与栅极偏置电压数据显示少数群体（孔）载波扩散长度为24μm。进行电容模式深度瞬态光谱（C-DLT）在84-800 k k中扫描，以确定限制电活性缺陷的分辨率。有趣的是，C-DLTS光谱揭示了正极和阴性峰，表明电子（大多数）和孔（少数群）捕集中心的同时存在。已经推断，在C-DLTS测量的稳态偏压下，MOS检测器在某些器件温度下以反转模式操作，导致孔填充少数陷阱中心，因此表现出少数型载体峰。

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  • 来源
    《Journal of Applied Physics》 |2021年第7期|074501.1-074501.9|共9页
  • 作者

    Sandeep K.Chaudhuri; OmerFaruk Karadavut; Joshua W.Kleppinger; Krishna C.Mandal;

  • 作者单位

    Department of Electrical Engineering University of South Carolina Columbia South Carolina 29208 USA;

    Department of Electrical Engineering University of South Carolina Columbia South Carolina 29208 USA;

    Department of Electrical Engineering University of South Carolina Columbia South Carolina 29208 USA;

    Department of Electrical Engineering University of South Carolina Columbia South Carolina 29208 USA;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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