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Re-engineering transition layers in AlGaN/CaN HEMT on Si for high voltage applications

机译：用于高压应用的A1GAN / CAN HEMT中的重新工程过渡图层

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摘要

We report on the study of step-graded AlGaN transition layers (TLs) in metalorganic chemical vapor deposition-grown GaN HEMT-on-silicon toward improving the breakdown field while minimizing buffer-induced current dispersion. The transition layers include three AlGaN epilayers of 75%,50%,and 25% Al-content,downgraded from bottom to top. The growth temperature and carbon doping are varied independently to assess the transition layer's role in reducing current collapse and leakage current. We observe that the introduction of High Temperature (HT) AlGaN increases the lateral but decreases the vertical leakage,the latter being attributed to the reduction of V-pit density. Temperature-dependent data indicate that the increased lateral (mesa) leakage current in HT AlGaN layers is due to space charge limited current,the activation energy of which yields the positions of the defect states within the bandgap. The increase in mesa leakage current in HT AlGaN layers is attributed to the formation of point defects such as oxygen in nitrogen site (O_N) and V_(Ga)-O_N complexes. The introduction of C-doping in the top AlGaN transition layer with 25% Al-content helps reduce lateral leakage in both mesa and 3-terminal configurations. The combination of HT AlGaN (75% Al-content) with C-doped AlGaN (25% Al-content) is found to be the optimal TL design that yielded a minimum buffer-induced current dispersion with a 65% channel recovery when the substrate was swept to -300 V and back; moreover,it also enabled a vertical breakdown field of 2.05 MV/cm defined at 1 A/cm~2 for a buffer thickness of 1.65 μm.
机译：我们报告了逐步研究阶梯式AlGaN转变层（TLS）的研究，以金属有机化学气相沉积的GaN Hemt-On硅朝向改善击穿场，同时最小化缓冲诱导的电流分散体。过渡层包括三个AlGaN外膜，75％，50％和25％的Al含量，从下部到顶部降级。生长温度和碳掺杂独立变化，以评估过渡层在降低电流塌陷和漏电流方面的作用。我们观察到高温（HT）ALGAN的引入增加横向但降低垂直泄漏，后者归因于V坑密度的降低。温度依赖的数据表明HT AlGaN层中的增加的横向（MESA）漏电流是由于空间电荷有限的电流，其激活能量产生缺陷状态在带隙内的位置。 HT alGaN层中的MESA漏电流的增加归因于在氮素位点（O_N）和V_（GA）-O_N复合物中的氧气缺陷的形成。在具有25％Al含量的顶部AlGaN过渡层中引入C掺杂有助于降低MESA和3端配置中的横向泄漏。 HTAlGaN（75％Al含量）与C掺杂的AlGaN（25％Al-含量）的组合是最佳的T1设计，其产生最小缓冲诱导的电流分散，当基材时具有65％的通道恢复被扫到-300 v和背部;此外，它还使2.05 mV / cm的垂直击穿字段为1a / cm〜2定义，缓冲厚度为1.65μm。

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  • 来源
    《Journal of Applied Physics》 |2021年第7期|075702.1-075702.10|共10页
  • 作者

    Nayana Remesh; Hareesh Chandrasekar; Anirudh Venugopalrao; Srinivasan Raghavan; Muralidharan Rangarajan; Digbijoy N.Nath;

  • 作者单位

    Centre for Nano Science and Engineering Indian Institute of Science Bangalore 560012 India;

    Centre for Nano Science and Engineering Indian Institute of Science Bangalore 560012 India;

    Centre for Nano Science and Engineering Indian Institute of Science Bangalore 560012 India;

    Centre for Nano Science and Engineering Indian Institute of Science Bangalore 560012 India;

    Centre for Nano Science and Engineering Indian Institute of Science Bangalore 560012 India;

    Centre for Nano Science and Engineering Indian Institute of Science Bangalore 560012 India;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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