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首页> 外文期刊>Journal of Applied Physics >In-situ crystallization of GeTeGaSb phase change memory stacked films
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In-situ crystallization of GeTeGaSb phase change memory stacked films

机译：GeTeGaSb相变存储堆叠膜的原位结晶

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摘要

Single and double layer phase change memory structures based on GeTe and GaSb thin films were deposited by pulsed laser deposition (PLD). Their crystallization behavior was studied using in-situ synchrotron techniques. Electrical resistance vs. temperature investigations, using the four points probe method, showed transition temperatures of 138 °C and 198 °C for GeTe and GaSb single films, respectively. It was found that after GeTe crystallization in the stacked films, Ga atoms from the GaSb layer diffused in the vacancies of the GeTe crystalline structure. Therefore, the crystallization temperature of the Sb-rich GaSb layer is decreased by more than 30 °C. Furthermore, at 210 °C, the antimony excess from GaSb films crystallizes as a secondary phase. At higher annealing temperatures, the crystalline Sb phase increased on the expense of GaSb crystalline phase which was reduced. Extended X-ray absorption fine structure (EXAFS) measurements at the Ga and Ge K-edges revealed changes in their local atomic environments as a function of the annealing temperature. Simulations unveil a tetrahedral configuration in the amorphous state and octahedral configuration in the crystalline state for Ge atoms, while Ga is four-fold coordinated in both as-deposited and annealed samples.
机译：通过脉冲激光沉积（PLD）沉积基于GeTe和GaSb薄膜的单相和双层相变存储结构。使用原位同步加速器技术研究了它们的结晶行为。使用四点探针法进行的电阻与温度关系研究表明，GeTe和GaSb单膜的转变温度分别为138 C和198C。发现在堆叠膜中GeTe结晶之后，来自GaSb层的Ga原子在GeTe晶体结构的空位中扩散。因此，富Sb的GaSb层的结晶温度降低了30 C以上。此外，在210°C下，来自GaSb膜的过量锑会结晶为第二相。在较高的退火温度下，Sb晶相增加，而GaSb晶相减少。在Ga和Ge K边缘进行的扩展X射线吸收精细结构（EXAFS）测量揭示了其局部原子环境随退火温度的变化。模拟揭示了Ge原子处于非晶态的四面体构型和处于结晶态的八面体构型，而Ga在沉积和退火后的样品中均具有四重配位。

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