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首页> 外文期刊>Journal of Applied Physics >Scattering in graphene associated with charged out-of-plane impurities
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Scattering in graphene associated with charged out-of-plane impurities

机译：与带电平面外杂质相关的石墨烯散射

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摘要

A charged impurity outside the plane of a graphene layer contributes to scattering of electrons (and holes) in the graphene. The interaction occurs through two distinct mechanisms associated with the charge: (1) the (screened) Coulomb potential, and (2) the electric field perpendicular to the graphene plane that causes a spatially varying Rashba spin-orbit interaction. Both types of scattering are examined, with the screened potential self-consistently calculated in nonlinear Thomas-Fermi approximation. Different selection rules for the two mechanisms lead to qualitative differences in the differential scattering cross-sections. Using accepted parameters for the Rashba interaction, the latter is found to make only a very small contribution to the scattering associated with a remote charge.
机译：石墨烯层平面外的带电杂质有助于石墨烯中电子（和空穴）的散射。相互作用是通过与电荷相关的两种不同的机制发生的：（1）（筛选出的）库仑电势，以及（2）垂直于石墨烯平面的电场，该电场引起空间变化的Rashba自旋轨道相互作用。检查了两种类型的散射，并以非线性Thomas-Fermi逼近自洽计算了屏蔽电位。两种机制的选择规则不同，会导致散射散射横截面在质量上有所不同。使用Rashba相互作用的可接受参数，发现后者仅对与远程电荷相关的散射产生很小的贡献。

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