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首页> 外文期刊>Journal of Applied Physics >Elimination of domain backswitching in BiFe0.95Mn0.05O3 thin films by lowering the layer thickness
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Elimination of domain backswitching in BiFe0.95Mn0.05O3 thin films by lowering the layer thickness

机译：通过降低层厚度来消除BiFe0.95Mn0.05O3薄膜中的域反向切换

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摘要

BiFe0.95Mn0.05O3 thin films with different layer thicknesses annealed at temperatures ranging from 500 to 600 °C were fabricated on indium tin oxide/glass substrates using a metal organic decomposition process. The ferroelectric hysteresis loops reveal that the remanent polarization (Pr) in the films of 42, 31, and 20 nm per layer can be improved dramatically by increasing the annealing temperature, while the Pr in the films of 25 nm/l shows weak dependence on the annealing temperature. For a given temperature, the Pr in the films of 25 nm/l is much larger than those in the films of 20, 31, and 42 nm/l, especially at temperatures below 575 °C. These phenomena can be ascribed to the lower content of defect complexes resulting from the columnar structure formed by decreasing layer thickness, which in turn results in the elimination of domain backswitching. The results also indicate that reducing the layer thickness moderately is an effective method for lowering the annealing temperature.
机译：使用金属有机分解工艺，在铟锡氧化物/玻璃基板上制备了在500到600°C的温度范围内退火的具有不同层厚的BiFe0.95Mn0.05O3薄膜。铁电磁滞回线显示，通过提高退火温度，可以显着改善每层42、31和20 nm膜中的剩余极化（Pr），而25 nm / l膜中的Pr对金属的依赖性较小。退火温度。对于给定的温度，尤其是在低于575°C的温度下，25 nm / l的膜中的Pr远大于20、31和42 nm / l的膜中的Pr。这些现象可以归因于由降低层厚度形成的柱状结构导致的缺陷复合物的含量较低，这进而消除了域反向转换。结果还表明适度减小层厚度是降低退火温度的有效方法。

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