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Electronic tuning of La2/3Sr1/3MnO3 thin films via heteroepitaxy

机译:La2 / 3Sr1 / 3MnO3薄膜的异质外延电子调谐

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摘要

Epitaxial La2/3Sr1/3MnO3 films grown on LaAlO3 substrates of various orientations exhibit a range of magnetoresistive properties, demonstrating the utility of strain as an electronic tuning parameter for manganites. Large magnetoresistance over a broad range of temperatures—highest (-64% at 50 kOe) at the lowest temperatures measured—is observed in a coherently strained La2/3Sr1/3MnO3 film on a (001) LaAlO3 substrate. In addition to higher magnetoresistance, its reduced magnetization and conductance suggest the stabilization of a more insulating ground state and the possibility of strain-induced phase coexistence. Similar field-dependent magnetotransport features at low temperatures, distinct from those exhibited by bulk manganites, are also seen in a partially strained film on a (110) LaAlO3 substrate, but bulk-like magnetoresistive behavior is observed in a relaxed La2/3Sr1/3MnO3 film on a (111) LaAlO3 substrate.
机译:在不同方向的LaAlO3衬底上生长的外延La2 / 3Sr1 / 3MnO3膜表现出一定的磁阻特性,证明了应变作为锰的电子调谐参数的效用。在(001)LaAlO3基板上的相干应变La2 / 3Sr1 / 3MnO3膜中,观察到在宽广的温度范围内具有较大的磁阻-在所测得的最低温度下最高(在50 kOe时为-64%)。除了较高的磁阻外,其磁化强度和电导率的降低还表明可以稳定更多绝缘的基态,并可能引起应变诱导的相共存。在(110)LaAlO3衬底上的部分应变薄膜中还可以看到与低温下类似的与场相关的磁迁移特征,这不同于块状锰矿所表现出的特征,但是在松弛的La2 / 3Sr1 / 3MnO3中却观察到了块状磁阻行为。 (111)LaAlO3衬底上的薄膜。

著录项

  • 来源
    《Journal of Applied Physics》 |2012年第6期|p.1-6|共6页
  • 作者单位

    Department of Materials Science and Engineering, University of California, Berkeley, California 94720, USA;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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