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首页> 外文期刊>Journal of Applied Physics >Unusual broadening of E0 and E0 + ΔSO transitions in GaAsBi studied by electromodulation spectroscopy
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Unusual broadening of E0 and E0 + ΔSO transitions in GaAsBi studied by electromodulation spectroscopy

机译：通过电调制光谱研究GaAsBi中E0和E0 +ΔSO跃迁的异常展宽

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摘要

The authors report very unusual relations between broadenings and intensities of E0 and E0 + ΔSO transitions in GaAsBi alloy. Such relations are not observed for typical III-V semiconductors including GaAs. For GaAs0.97Bi0.03 it has been found that the broadening of E0 transition is about 40% larger comparing to the broadening of the E0 + ΔSO one, whereas for GaAs the E0 transition is three times narrower that the E0 + ΔSO one. In addition, relative intensities between E0 and E0 + ΔSO transitions decreased from 100 to 4 times due to the incorporation of 3% Bi atoms into GaAs host. The origin of such behaviors is discussed in this paper.
机译：作者报告了GaAsBi合金中E0和E0 +ΔSO跃迁的展宽和强度之间非常不寻常的关系。对于包括GaAs的典型III-V族半导体没有观察到这种关系。对于GaAs0.97Bi0.03，已经发现，与E0 +ΔSO1的展宽相比，E0跃迁的展宽约大40％，而对于GaAs，E0过渡的展宽比E0 +ΔSO1的展宽窄三倍。此外，由于将3％的Bi原子掺入GaAs主体中，E0和E0 +ΔSO跃迁之间的相对强度从100倍降低到4倍。本文讨论了这种行为的起源。

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