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首页> 外文期刊>Journal of Applied Physics >Bipolar pulsed excitation of erbium-doped nanosilicon light emitting diodes
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Bipolar pulsed excitation of erbium-doped nanosilicon light emitting diodes

机译：掺nano纳米硅发光二极管的双极脉冲激发

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摘要

High quantum efficiency erbium doped silicon nanocluster (Si-NC:Er) light emitting diodes (LEDs) were grown by low-pressure chemical vapor deposition (LPCVD) in a complementary metal-oxide-semiconductor (CMOS) line. Erbium (Er) excitation mechanisms under direct current (DC) and bipolar pulsed electrical injection were studied in a broad range of excitation voltages and frequencies. Under DC excitation, Fowler-Nordheim tunneling of electrons is mediated by Er-related trap states and electroluminescence originates from impact excitation of Er ions. When the bipolar pulsed electrical injection is used, the electron transport and Er excitation mechanism change. Sequential injection of electrons and holes into silicon nanoclusters takes place and nonradiative energy transfer to Er ions is observed. This mechanism occurs in a range of lower driving voltages than those observed in DC and injection frequencies higher than the Er emission rate.
机译：通过低压化学气相沉积（LPCVD）在互补金属氧化物半导体（CMOS）生产线中生长了高量子效率的掺do硅纳米簇（Si-NC：Er）发光二极管（LED）。在宽范围的激励电压和频率下研究了直流电和双极脉冲电注入下的（激励机理。在直流激励下，电子的Fowler-Nordheim隧穿由与Er有关的陷阱态来介导，电致发光源自Er离子的冲击激发。当使用双极脉冲电注入时，电子传输和Er激发机理改变。将电子和空穴顺序注入硅纳米团簇中，观察到非辐射能量转移到Er离子上。该机制的发生范围是，在比直流观察到的驱动电压更低的驱动电压范围内，并且注入频率高于Er发射速率。

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