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Modeling the effect of native and laser-induced states on the dielectric breakdown of wide band gap optical materials by multiple subpicosecond laser pulses

机译:通过多个亚皮秒激光脉冲模拟本征态和激光诱导态对宽带隙光学材料介电击穿的影响

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摘要

A model for the multiple-pulse laser-induced breakdown behavior of dielectrics is presented. It is based on a critical conduction band (CB) electron density leading to dielectric breakdown. The evolution of the CB electron density during the pulse train is calculated using rate equations involving transitions between band and mid-gap states (native and laser-induced). Using realistic estimations for the trap density and ionization cross-section, the model is able to reproduce the experimentally observed drop in the multiple-pulse damage threshold relative to the single-pulse value, as long as the CB electron density is controlled primarily by avalanche ionization seeded by multiphoton ionization of the traps and the valence band. The model shows that at long pulse duration, the breakdown threshold becomes more sensitive to presence of traps close (within one photon energy) to the CB. The effect of native and laser-induced defects can be distinguished by their saturation behavior. Finally, measurements of the multiple-pulse damage threshold of hafnium oxide films are used to illustrate the application of the model.
机译:提出了电介质多脉冲激光诱导击穿行为的模型。它基于导致电介质击穿的临界导带(CB)电子密度。使用涉及带隙和中隙状态(本征和激光感应)之间的跃迁的速率方程,可以计算出脉冲序列中CB电子密度的变化。使用实际的捕集阱密度和电离截面估计值,只要CB电子密度主要由雪崩控制,该模型就可以重现实验观察到的相对于单脉冲值的多脉冲损伤阈值下降。由陷阱和价带的多光子电离引发的电离。该模型表明,在长脉冲持续时间下,击穿阈值对靠近CB(在一个光子能量内)的陷阱的存在变得更加敏感。天然缺陷和激光诱导的缺陷的影响可以通过其饱和行为来区分。最后,通过测量氧化films薄膜的多脉冲损伤阈值来说明该模型的应用。

著录项

  • 来源
    《Journal of Applied Physics》 |2010年第4期|P.043523-043523-7|共7页
  • 作者单位

    Department of Physics and Astronomy, University of New Mexico, Albuquerque, New Mexico 87131, USA;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

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