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首页> 外文期刊>Journal of Applied Physics >Theory and experiments on open circuit voltage decay of p‐n junction diodes with arbitrary base width, including the effects of built‐in drift field in the base and recombinations in the emitter
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Theory and experiments on open circuit voltage decay of p‐n junction diodes with arbitrary base width, including the effects of built‐in drift field in the base and recombinations in the emitter

机译：具有任意基极宽度的p-n结二极管开路电压衰减的理论和实验，包括基极内置漂移场和发射极复合的影响

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摘要

An expression for the forward current induced open circuit voltage decay of a p‐n junction diode with a finite base width is derived. The expression includes the effects of recombination in the emitter and the built‐in drift field in the base which may arise due to a nonuniform impurity profile. The voltage decay rate is dependent on the base thickness, base drift field, emitter dark saturation current, the effective surface recombination velocity at the back contact, and the minority carrier lifetime in the base. The effects of the drift field in the emitter, emitter lifetime, and surface recombination velocity at the emitter surface are completely taken into account by the emitter saturation current. Experimentally observed voltage decay plots for thin base hyperabrupt varactor diodes with retrograded impurity gradients in the base are reported. It is shown that the experimental results can be interpreted satisfactorily using the above theory. The values of the minority‐carrier lifetime in the base are determined from the experimental results.
机译：推导了具有有限基极宽度的PN结二极管的正向电流感应开路电压衰减的表达式。该表达式包括发射极中的复合效应和基极中的内置漂移场，这可能是由于杂质分布不均匀而引起的。电压衰减率取决于基极厚度，基极漂移场，发射极暗饱和电流，背触点处的有效表面复合速度以及基极中的少数载流子寿命。发射极的饱和电流完全考虑了发射极中的漂移场，发射极的寿命以及发射极表面的表面复合速度的影响。报告了薄基极超突变变容二极管的实验观察到的电压衰减图，其中基极中的杂质梯度发生了逆转。结果表明，使用上述理论可以令人满意地解释实验结果。基地中少数载流子寿命的值由实验结果确定。

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    《Journal of Applied Physics》 |1982年第12期|P.9122-9129|共8页
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  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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