Diffusion of indium in silicon inert and oxidizing ambients

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Diffusion of indium in silicon inert and oxidizing ambients

机译：铟在惰性硅中的扩散和氧化性环境

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The diffusion of indium in silicon at 1000 °C has been measured in inert (dry nitrogen) and oxidizing (dry oxygen) ambients. It was found that, similarly to phosphorous, boron, and arsenic, indium experiences significant oxidation‐enhanced diffusion. This result indicates that indium, like the other elements mentioned above, diffuses in silicon by a mixed interstitialcy and vacancy mechanism. It was also found that indium, similarly to gallium, segregates readily and diffuses rapidly in thermal silicon dioxide.

机译：在惰性（干燥氮气）和氧化（干燥氧气）环境中测量了铟在1000 C下在硅中的扩散。研究发现，铟与磷，硼和砷相似，经历了显着的氧化增强扩散。该结果表明，铟与上述其他元素一样，通过间隙和空位的混合机制在硅中扩散。还发现，铟与镓相似，易于在热二氧化硅中偏析并迅速扩散。

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《Journal of Applied Physics》 |1982年第12期|P.9214-9216|共3页
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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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1. Role of a Si0.95Ge0.05 epilayer cap on boron diffusion in silicon under inert and dry oxidizing ambient annealing [J] . Hasanuzzaman Mohammad, Haddara Yaser M., Knights Andrew P. Materials science in semiconductor processing . 2016,第Null期

机译：在惰性和干氧化环境退火下，Si0.95Ge0.05外延层盖对硼在硅中扩散的作用
2. Void evolution in silicon under inert and dry oxidizing ambient annealing and the role of a Si_(1-x)Ge_x epilayer cap [J] . Mohammad Hasanuzzaman, Yaser M. Haddara, Andrew P. Knights Journal of Applied Physics . 2012,第5期

机译：惰性和干氧化环境退火下硅中的空洞演化以及Si_（1-x）Ge_x外延层帽的作用
3. Effect of ramping anneals under inert or oxidizing ambient on the formation of oxygen precipitate denuded zone in nitrogen-doped Czochralski silicon wafers [J] . Xiangyang Ma, Daxi Tian, Longfei Gong, Physica Status Solidi. A, Applications and Materials Science . 2006,第8期

机译：惰性或氧化环境下斜线退火对掺氮切克劳斯基硅片中氧沉淀剥蚀区形成的影响
4. Interdiffusion behavior of Si/Si_(1-x)Ge_x layers in inert and oxidizing ambients [C] . Michelle Griglione, Tim Anderson, Yaser Haddara, Silicon front-end technology-materials processing and modelling . 1998

机译：Si / Si_（1-x）Ge_x层在惰性和氧化性环境中的互扩散行为
5. Continuum modelling of silicon diffusion in indium gallium arsenide. [D] . Aldridge, Henry Lee, Jr. 2016

机译：硅在砷化铟镓中扩散的连续模型。
6. Electrical and Optical Characterization of Sputtered Silicon Dioxide Indium Tin Oxide and Silicon Dioxide/Indium Tin Oxide Antireflection Coating on Single-Junction GaAs Solar Cells [O] . Wen-Jeng Ho, Jian-Cheng Lin, Jheng-Jie Liu, 2017

机译：单结GaAs太阳能电池上溅射的二氧化硅氧化铟锡和二氧化硅/氧化铟锡抗反射涂层的电学和光学特性
7. Evolution of dislocation loops in silicon in an inert ambient—II [O] . Department of Electrical Engineering 214 A Rhines Hall University of Florida Gainesville FL 32611 U.S.A. ( host institution ), Chaudhry S., Liu J., 1995

机译：惰性环境中硅中位错环的演变-II
8. Boron in Near-Intrinsic (100) and (111) Silicon under Inert and Oxidizing Ambients - Diffusion and Segregation. [R] . Antoniadis, D. A., Gonzalez, A. G., Dutton, R. W. 1977

机译：在惰性和氧化环境下的近内在（100）和（111）硅中的硼 - 扩散和分离。

Diffusion of indium in silicon inert and oxidizing ambients

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