Experimental investigation of the amorphous silicon melting temperature by fast heating processes

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Experimental investigation of the amorphous silicon melting temperature by fast heating processes

机译：快速加热法非晶硅熔化温度的实验研究

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The recrystallization of amorphous Si layers on Si crystal substrates after laser irradiation was investigated to test previous experimental evidence that both the melting point and the melting enthalpy of the amorphous are lower than the corresponding crystalline values. The irradiation was performed in some cases from the back side of 100‐μm‐thick Si wafers to obtain a temperature distribution in the amorphous layer with a small spatial gradient. In the case of front irradiation the threshold energy density was measured as a function of the amorphous layer thickness, for the polycrystalline formation, crystallization with residual disorder, and good annealing, respectively. The experimental data agree quite well with heat flow calculations assuming a reduction of about 30% in the melting point and enthalpy of amorphous silicon with respect to crystalline silicon.

机译：研究了激光辐照后，Si晶体基板上非晶Si层的再结晶，以测试先前的实验证据，即非晶和非晶体的熔点和熔化焓均低于相应的晶体值。在某些情况下，辐照是从100μm厚的Si晶片的背面进行的，以在具有较小空间梯度的非晶层中获得温度分布。在前照射的情况下，测量阈值能量密度与非晶层厚度的函数关系，分别用于多晶形成，具有残余无序的结晶和良好的退火。假设非晶硅相对于晶体硅的熔点和焓降低了约30％，则实验数据与热流计算非常吻合。

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《Journal of Applied Physics》 |1982年第12期|P.8730-8733|共4页
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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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Experimental investigation of the amorphous silicon melting temperature by fast heating processes

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