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Diodes formed by laser drilling and diffusion

机译:通过激光钻孔和扩散形成的二极管

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Novel three‐dimensional diode arrays have been produced in semiconductor wafers by a two‐step process involving laser drilling and solid state diffusion. Holes are first produced through the wafer by laser drilling. Under suitable conditions, little or no damage to the wafer results from laser drilling. Then cylindrical p‐n junctions around the laser‐drilled holes are formed by diffusing an impurity into the wafer from a source in contact with the walls of the laser‐drilled holes. Three applications of drilled diodes are discussed: microchannel interconnections through wafers, isolation grids, and radiation imagers.
机译:通过两步工艺(包括激光钻孔和固态扩散),在半导体晶圆中生产出了新颖的三维二极管阵列。首先通过激光钻孔在晶片上产生孔。在合适的条件下,激光打孔对晶片的损害很小或没有。然后,通过将杂质从与激光钻孔壁接触的源扩散到晶片中,形成围绕激光钻孔的圆柱形p-n结。讨论了二极管的三种应用:通过晶圆的微通道互连,隔离栅和辐射成像仪。

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    《Journal of Applied Physics》 |1982年第12期|P.9154-9164|共11页
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  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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