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首页> 外文期刊>Journal of Applied Physics >Derivative surface photovoltage spectroscopy; a new approach to the study of absorption in semiconductors: GaAs
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Derivative surface photovoltage spectroscopy; a new approach to the study of absorption in semiconductors: GaAs

机译：导数表面光电压光谱；研究半导体吸收的新方法：砷化镓

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Derivative surface photovoltage spectroscopy was achieved with wavelength modulation; it was applied to GaAs and permitted, in a single experiment, the determination of changes in the absorption coefficient over an energy range of 0.5 to 4.3 eV. Photoionization characteristics of deep levels were determined. All known critical‐point transitions up to 4.3 eV were clearly obtained from second‐derivative spectra. In addition, previously unresolved transitions were observed at about 2.6 eV. Oscillatory photovoltage in high magnetic fields was observed, and it was used to identify the transitions in the vicinity of the energy gap.
机译：通过波长调制实现了导数表面光电压光谱法；将其应用于GaAs并允许在单个实验中确定0.5至4.3 eV能量范围内吸收系数的变化。确定了深层的光电离特性。从二阶导数光谱清楚地获得了所有高达4.3 eV的临界点跃迁。另外，在约2.6eV处观察到先前未解决的转变。在高磁场中观察到振荡光电压，并将其用于识别能隙附近的跃迁。

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    《Journal of Applied Physics》 |1979年第7期|P.5059-5061|共3页
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  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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