Low‐temperature film thickness measurements by a quartz thickness monitor

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Low‐temperature film thickness measurements by a quartz thickness monitor

机译：通过石英厚度监测仪进行低温薄膜厚度测量

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A quartz‐crystal thickness monitor was successfully applied at low temperatures (5–80 K) and used to determine the areal density of condensed CH4, N2, CO2, Ar, Kr, and Xe. The frequency‐shift dependence on the deposited mass was calibrated using the x‐ray absorption technique. The stability, reproducibility, and temperature variation of the resonance frequency in the 5–300 K temperature range are discussed.

机译：石英晶体厚度监测仪已成功地在低温（5–80 K）下使用，并用于确定冷凝的CH4，N2，CO2，Ar，Kr和Xe的面密度。频移对沉积质量的依赖性已使用X射线吸收技术进行了校准。讨论了在5–300 K温度范围内谐振频率的稳定性，可重复性和温度变化。

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《Journal of Applied Physics》 |1977年第7期|P.3116-3117|共2页
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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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1. Erratum: Low‐temperature film thickness measurements by a quartz thickness monitor [J] . Journal of Applied Physics . 1977,第12期

机译：勘误：通过石英厚度监测仪测量低温薄膜厚度
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4. In-situ film thickness and temperature monitoring using a 2 GHz acoustic phase measurement system [C] . Bhardwaj, S., Mohan, . 1991

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Low‐temperature film thickness measurements by a quartz thickness monitor

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