Auger profiling of ’’abrupt’’ LPE AlxGa1-xAs‐GaAs heterojunctions

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Auger profiling of ’’abrupt’’ LPE AlxGa1-xAs‐GaAs heterojunctions

机译：俄歇分析或``突然''LPE AlxGa1-xAs-GaAs异质结

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Ion milling–Auger electron spectroscopy has been used to study, for the first time, the chemical widths of ’’abrupt’’ LPE AlxGa1-xAs‐GaAs heterojunctions with composition x=0.43, 0.60, and 0.85. ’’Abrupt’’ LPE junctions were found to have chemical interface widths of ≪90–130 Å.

机译：离子铣削-俄歇电子能谱法已首次用于研究“突然的” LPE AlxGa1-xAs-GaAs异质结的化学宽度，其组成x = 0.43、0.60和0.85。发现“突然” LPE结的化学界面宽度为90-130Å。

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《Journal of Applied Physics》 |1977年第7期|P.3147-3149|共3页
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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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1. Sign inversion of the Stark shift in single non-abrupt GaAs/AlxGa1-xAs quantum wells [J] . Ferreira E.C., Freire J.A.K., Farias G.A., Journal of Physics. Condensed Matter . 1999,第29期

机译：非突变GaAs / AlxGa1-xAs量子阱中Stark位移的符号反转
2. Low 1/f noise characteristics of AlGaAs/GaAs heterojunction bipolar transistor with electrically abrupt emitter-base junction [J] . Jin-Hi Shin, Joonwoo Lee IEEE Electron Device Letters . 1997,第2期

机译：具有突然电子发射极-基极结的AlGaAs / GaAs异质结双极晶体管的低1 / f噪声特性
3. Numerical study on the injection performance of AlGaAs/GaAs abrupt emitter heterojunction bipolar transistors [J] . Kyounghoon Yang, East J.R. IEEE Transactions on Electron Devices . 1994,第2期

机译：AlGaAs / GaAs突然发射极异质结双极晶体管注入性能的数值研究
4. InGaAsSb/AlGaAsSb heterojunction photodetectors for wavelength 1.8-2.4 /spl mu/m grown by LPE [C] . Piotrowski, T.T., Piotrowska, . 1998

机译：LPE生长的InGaAsSb / AlGaAsSb异质结光电探测器的波长为1.8-2.4 / spl mu / m
5. Ballistic transport in two-subband two-dimensional carrier systems at GaAs/AlGaAs heterojunctions. [D] . Lu, JengPing. 1998

机译：GaAs / AlGaAs异质结处两子带二维载波系统中的弹道传输。
6. Optimization of GaAs Nanowire Pin Junction Array Solar Cells by Using AlGaAs/GaAs Heterojunctions [O] . Yao Wu, Xin Yan, Wei Wei, 2018

机译：AlGaAs / GaAs异质结优化GaAs纳米线pin结阵列太阳能电池
7. Characterisation and crystal growth of GaAs and AlxGa1-xAs epilayers on 100 GaAs by liquid phase epitaxy (LPE). [O] . 1994

机译：通过液相外延（LpE）在100 Gaas上表征和晶体生长Gaas和alxGa1-xas外延层。
8. Phonon-Scattering-Limited Electron Mobilities in AlxGa1-xAs/GaAs Heterojunctions [R] . Kawamura, T., Das Sarma, S. 1992

机译：alxGa1-xas / Gaas异质结中的声子散射限制电子迁移率

Auger profiling of ’’abrupt’’ LPE AlxGa1-xAs‐GaAs heterojunctions

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