N‐type switching erroneously attributed to field‐enhanced trapping

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N‐type switching erroneously attributed to field‐enhanced trapping

机译：N型切换错误地归因于场增强陷阱

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N‐ or S‐type switching in the I‐V characteristics of semiconductor resistive bars immersed in liquid nitrogen occur if the I2R power per surface area generated in the semiconductor exceeds a certain threshold value. Such switching has been consistently misinterpreted and attributed to field‐enhanced trapping. This communication briefly explains the thermal switching, identifies numerous errors in the literature, and describes an experiment to distinguish bertween thermal and electronic switching.

机译：如果半导体中产生的每单位表面积的I2R功率超过某个阈值，则会发生浸入液氮中的半导体电阻条的I-V特性的N或S型转换。这种转换一直被误解并归因于现场增强的陷井。该通讯简要介绍了热开关，识别了文献中的许多错误，并描述了区分热开关和电子开关的实验。

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《Journal of Applied Physics》 |1977年第7期|P.3156-3158|共3页
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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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N‐type switching erroneously attributed to field‐enhanced trapping

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