Growth mechanism for solid‐phase epitaxy of Si in the Si 〈100〉/Pd2Si/Si(amorphous) system studied by a radioactive tracer technique

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Growth mechanism for solid‐phase epitaxy of Si in the Si 〈100〉/Pd2Si/Si(amorphous) system studied by a radioactive tracer technique

机译：用放射性示踪技术研究Si 〈100〉 / Pd2Si / Si（非晶）体系中Si固相外延生长的机理

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A tracer technique using radioactive 31Si (T1/2=2.62 h) was used to study solid‐phase epitaxial growth (SPEG) of silicon. After depositing Pd and Si onto single‐crystal substrates which had been activated in a nuclear reactor, Pd2Si was formed with about equal amounts of radioactive and nonradioactive silicon during heating at 400 °C for 5 min. After a second annealing stage (450 °C→500 °C in 1 h) the silicide layer which moves to the top of the sample during SPEG was etched off with aqua regia. From the absence of radioactive 31Si in the etchant solution it is concluded that SPEG takes place by dissociation of the Pd2Si layer at the single‐crystal interface to provide free Si for epitaxial growth, while new silicide is formed at the interface with the amorphous Si. These results were confirmed by evaporating radioactive silicon onto nonactivated silicon substrates before evaporation of Pd and stable amorphous Si and by measuring the activity in the SPEG sample before and after etching off the silicide layer.

机译：使用放射性31Si（T1 / 2 = 2.62 h）的示踪技术研究了硅的固相外延生长（SPEG）。将Pd和Si沉积到已在核反应堆中活化的单晶衬底上后，在400°C加热5分钟的过程中，Pd2Si形成了大约等量的放射性和非放射性硅。在第二个退火阶段（1小时内在450°C→500°C的温度）之后，用王水蚀刻掉了在SPEG过程中移动到样品顶部的硅化物层。从蚀刻剂溶液中不存在放射性31Si可以得出结论，SPEG是通过单晶界面上的Pd2Si层解离而提供的，从而为外延生长提供了自由的Si，而新的硅化物则在与非晶Si的界面处形成。通过在Pd和稳定的非晶硅蒸发之前将放射性硅蒸发到非活化硅衬底上，以及在蚀刻掉硅化物层之前和之后测量SPEG样品中的活性，可以证实这些结果。

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《Journal of Applied Physics》 |1977年第7期|P.2886-2890|共5页
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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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Growth mechanism for solid‐phase epitaxy of Si in the Si 〈100〉/Pd2Si/Si(amorphous) system studied by a radioactive tracer technique

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