Crystal orientation and temperature effects on Pd2Si‐Si Schottky‐barrier diodes formed by solid‐phase epitaxy

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Crystal orientation and temperature effects on Pd2Si‐Si Schottky‐barrier diodes formed by solid‐phase epitaxy

机译：固相外延形成的Pd2Si-Si肖特基势垒二极管的晶体取向和温度效应

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Silicon solid‐phase epitaxy utilizing Pd2Si as a transport medium is shown to be dependent on the substrate orientation and postepitaxial heat‐treatment temperature. It is demonstrated that devices fabricated on (1‐0‐0) substrates are superior to devices made on (1‐1‐1) substrates.

机译：利用Pd2Si作为传输介质的硅固相外延显示出取决于衬底方向和外延后热处理温度。事实证明，在（0-1-0）基板上制造的器件优于在（1-1-1）基板上制造的器件。

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《Journal of Applied Physics》 |1977年第7期|P.3185-3186|共2页
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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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Crystal orientation and temperature effects on Pd2Si‐Si Schottky‐barrier diodes formed by solid‐phase epitaxy

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