Alternating current bridge, step response, and dc conduction measurements are reported on anodic oxide films on tantalum with counterelectrodes of gold and indium. The step response currents followed a t-n law, where n was from 0.9 to 1.0 depending on conditions. For a linear dielectric response, this corresponds to ϵ″ (ω) varying as ωn-1, i.e., as either ω-0.1 or independent of frequency, respectively. For low values of applied step voltages with specimens made in certain ways, the magnitude of the step response agreed with extrapolated bridge measurements. Deviations are discussed in terms of electronic space‐charge effects. Below room temperature, ϵ″/T was constant as expected for a superposition of Debye losses with relaxation times determined by a thermal activation process with a flat distribution of activation energies. The slope of log J vs F1/2 plots for electronic conduction corresponded to the Schottky or Poole‐Frenkel values depending on whether the Ta electrode was negative or positive.
展开▼
机译：据报道，钽上的阳极氧化膜具有金和铟的反电极，可以测量交流电桥，阶跃响应和直流传导。阶跃响应电流遵循t-n定律，其中n根据条件从0.9到1.0。对于线性介电响应，这对应于随ωn-1变化的ϵ''（ω），即分别为ω-0.1或与频率无关。对于以某些方式制成的样品，施加的阶跃电压值较低时，阶跃响应的幅度与外推电桥测量值一致。偏差是根据电子空间电荷效应进行讨论的。在室温以下，ϵ / T恒定，这是德拜损耗与松弛时间的叠加所期望的，松弛时间由具有活化能平坦分布的热活化过程确定。电子传导的log J vs F1 / 2图的斜率对应于肖特基或Poole-Frenkel值，具体取决于Ta电极是负电极还是正电极。
展开▼
