High‐Frequency Noise in Germanium‐Silicon n‐n Heterojunctions

首页> 外文期刊>Journal of Applied Physics >High‐Frequency Noise in Germanium‐Silicon n‐n Heterojunctions

【24h】

High‐Frequency Noise in Germanium‐Silicon n‐n Heterojunctions

机译：锗硅n-n异质结中的高频噪声

获取原文

获取原文并翻译 | 示例

掌桥外文数据库（机构版） >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

Germanium‐silicon heterojunctions have been fabricated by placing bulk n‐type germanium on a germanium film that has been vacuum deposited on an n‐type epitaxial silicon substrate. The germanium is alloyed to the silicon in a hydrogen atmosphere with the resulting heterojunctions showing either a current saturation when forward and reverse biased or for reverse bias only, depending upon the resistivity of the bulk n‐type germanium. The forward‐biased conductance and capacitance is measured over a range of frequencies from 1 to 50 MHz. The forward‐biased conductance and capacitance of the n‐n heterojunction have variations with bias current and with frequency similar to those of a Schottky barrier device. The excess noise temperature of the device is measured over a range of bias current at 30 MHz. The theoretical excess noise temperature of the n‐n heterojunction is modeled with a mean‐square noise current generator in parallel with the junction conductance and capacitance; a series resistance is added to complete the model. Comparison between the theoretical and measured excess noise temperatures indicates that the junction shows nearly full shot noise at high current levels. At low current levels traps at the interface cause the junction to show less than full shot noise. In the case of the double saturating diode, a minimum excess noise temperature is observed at a current level slightly less than the saturation current. Beyond the saturating current, the onset of breakdown is evidenced by a large increase in the excess noise temperature.

机译：锗硅异质结是通过将块状n型锗放置在锗膜上制成的，该锗膜已真空沉积在n型外延硅衬底上。锗在氢气氛中与硅合金化，所产生的异质结在正向和反向偏置时显示电流饱和，或者仅对于反向偏置显示电流饱和，这取决于整体n型锗的电阻率。在1至50 MHz的频率范围内测量正偏电导和电容。 n-n异质结的正向电导和电容随偏置电流和频率的变化而有所变化，类似于肖特基势垒器件。在30 MHz的偏置电流范围内测量器件的过大噪声温度。 n-n异质结的理论超额噪声温度用均方噪声电流发生器与结电导和电容并联进行建模；添加了串联电阻以完成模型。理论上和测量到的过量噪声温度之间的比较表明，该结在高电流水平下显示出几乎全散粒噪声。在低电流水平下，界面处的陷阱会导致结点显示的噪声小于全散噪声。在双饱和二极管的情况下，在略小于饱和电流的电流水平上观察到最小的过量噪声温度。除饱和电流外，过大噪声温度的大幅提高证明了击穿的开始。

著录项

来源
《Journal of Applied Physics》 |1969年第10期|共7页
作者

展开▼
作者单位

展开▼
收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类
关键词

相似文献

外文文献
中文文献
专利

1. Discussion on ????????Measurements of junction-transistor noise in the frequency range 7-50 kc/s????????, ????????A germanium diffused-junction photo-electric cell????????, ????????Transistor power amplifiers????????, ????????Transistor d.c. convertors???????? and ????????Noise in silicon microwave diodes???????? before a joint meeting of the Radio and Measurements Sections, 11th May, 1955 [J] . Proceedings of the IEE - Part B: Radio and Electronic Engineering . 1955,第6期

机译：关于在7-50 kc / s频率范围内测量结型晶体管噪声的讨论?????????，锗扩散结光电二极管，电池?????????，?????????晶体管功率放大器?????????，????????晶体管dc转换器????????硅微波二极管中的噪声在1955年5月11日的无线电和测量部门的联席会议之前
2. The authors' replies to the discussion on ????????Measurements of junction-transistor noise in the frequency range 7-50 kc/s????????, ????????A germanium diffused-junction photo-electric cell????????, ????????Transistor power amplifiers????????, ????????Transistor d.c. convertors???????? and ????????Noise in silicon microwave diodes???????? [J] . Nicoll G.R., Stephenson W.L., Waddell J.M., Proceedings of the IEE - Part B: Radio and Electronic Engineering . 1955,第6期

机译：作者对有关在频率范围为7-50 kc / s的结型晶体管噪声的测量的讨论作出了答复。锗扩散结光电电池晶体管功率放大器晶体管直流转换器????????硅微波二极管中的噪声
3. Band gap profiles of intrinsic amorphous silicon germanium films and their application to amorphous silicon germanium heterojunction solar cells [J] . Krajangsang Taweewat, Inthisang Sorapong, Dousse Adrien, Optical Materials . 2016,第Jana期

机译：本征非晶硅锗膜的带隙分布及其在非晶硅锗异质结太阳能电池中的应用
4. A 2.5 GHz low phase noise silicon germanium heterojunction bipolar transistor ring oscillator [C] . Sarel Johannes Lodiwikus Jean van Niekerk, Saurabh Sinha International Semiconductor Conference . 2016

机译：2.5 GHz的低相位噪声硅锗异质结双极晶体管环形振荡器
5. Band engineering in silicon/silicon(1-y)carbon(y) and silicon/silicon(1-x-y)germanium(x)carbon(y) heterostructures and application to PNP heterojunction bipolar transistors (Silicon carbide, Silicon germanium carbide). [D] . Singh, Dinkar V. 2001

机译：硅/硅（1-y）碳（y）和硅/硅（1-x-y）锗（x）碳（y）异质结构的能带工程及其在PNP异质结双极晶体管（碳化硅，碳化硅锗）中的应用。
6. A self-assembled microbonded germanium/silicon heterojunction photodiode for 25 Gb/s high-speed optical interconnects [O] . Chih-Kuo Tseng, Wei-Ting Chen, Ku-Hung Chen, -1

机译：自组装的微键合锗/硅异质结光电二极管用于25 Gb / s高速光学互连
7. Silicon-germanium heterojunction bipolar transistors for extremely low-noise applications [O] . Bardin Joseph Cheney 2009

机译：硅锗异质结双极晶体管，适用于极低噪声应用
8. Role of the Silicon Germanium (SiGe) Heterojunction Bipolar Transistor (HBT) in Mobile Technology Platforms [R] . Mitchell, G. A. 2011

机译：硅锗（siGe）异质结双极晶体管（HBT）在移动技术平台中的作用

High‐Frequency Noise in Germanium‐Silicon n‐n Heterojunctions

摘要

著录项

相似文献

相关主题

期刊订阅