USE OF ROBUST PREDICTIVE METHOD FOR NANO-CMOS PROCESS. APPLICATION TO BASIC BLOCK ANALOG CIRCUIT DESIGN

HOUDA DAOUD; SAMIR BENSELEM; SONIA ZOUARI; MOURAD LOULOU

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USE OF ROBUST PREDICTIVE METHOD FOR NANO-CMOS PROCESS. APPLICATION TO BASIC BLOCK ANALOG CIRCUIT DESIGN

机译：鲁棒性预测方法在纳米CMOS工艺中的应用。在基本块模拟电路设计中的应用

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This paper deals with the prediction of primary parameters of CMOS transistor for upcoming process using the robust Bisquare Weights method which is able to provide solutions to the challenges of some parameters of Nanoscale CMOS. Predicted parameters for 45 nm to 22 nm process nodes are obtained in order to solve design challenges generated by Nanoscale process. These predicted primary parameters are helpful to estimate the performance of a basic element circuit having a key role in the design of upcoming analog systems. Comparisons between predictive technology model data and predicted parameters are used to check the validity of the used method. As a study case, we will detail the behavior of optimized telescopic operational transconductance amplifier performance with process scaling.

机译：本文使用鲁棒的Bisquare权重法对即将到来的工艺中CMOS晶体管的主要参数进行预测，该方法能够为纳米CMOS某些参数的挑战提供解决方案。获得用于45 nm至22 nm工艺节点的预测参数，以解决纳米工艺所产生的设计挑战。这些预测的主要参数有助于估算在即将到来的模拟系统设计中起关键作用的基本元件电路的性能。预测技术模型数据与预测参数之间的比较用于检查所用方法的有效性。作为研究案例，我们将详细介绍优化的伸缩式运算跨导放大器的性能与过程缩放的关系。

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来源
《Journal of Circuits, Systems, and Computers》 |2012年第7期|1250061.1-1250061.22|共22页
作者
HOUDA DAOUD; SAMIR BENSELEM; SONIA ZOUARI; MOURAD LOULOU;
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作者单位

University of Sfax, Tunisia, National Engineering School of Sfax, Information Technologies and Electronics Laboratory, BP W 3038 Sfax, Tunisia;

University of Sfax, Tunisia, National Engineering School of Sfax, Information Technologies and Electronics Laboratory, BP W 3038 Sfax, Tunisia;

University of Sfax, Tunisia, National Engineering School of Sfax, Information Technologies and Electronics Laboratory, BP W 3038 Sfax, Tunisia;

University of Sfax, Tunisia, National Engineering School of Sfax, Information Technologies and Electronics Laboratory, BP W 3038 Sfax, Tunisia;

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正文语种 eng
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关键词
process scaling; least squares; bisquare weights; predictive primary parameters; predicted and optimized OTA performance;

机译：过程缩放;最小二乘双平方权重;预测性主要参数;预测和优化的OTA性能;

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USE OF ROBUST PREDICTIVE METHOD FOR NANO-CMOS PROCESS. APPLICATION TO BASIC BLOCK ANALOG CIRCUIT DESIGN

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