Proposal of a novel recess-free enhancement-mode AIGaN/GaN HEMT with field-assembled structure: a simulation study

Wang Zeheng

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Proposal of a novel recess-free enhancement-mode AIGaN/GaN HEMT with field-assembled structure: a simulation study

机译：具有现场组装结构的新型无凹陷增强型AIGaN / GaN HEMT的提案：仿真研究

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摘要

A novel recess-free enhancement-mode AlGaN/GaN high-electron-mobility transistor (HEMT) is proposed. The device features a field-assembled structure (FAS) consisting of one short Schottky source finger as well as an overlying gate, which can modulate the potential beneath the source. This structure enables manipulation of the source barrier height and thus modulation of the current through the reverse source-to-drain Schottky barrier diode. According to the analytical model and detailed simulations, the proposed FAS-HEMT has great potential for use in power converters, monolithic microwave integrated circuits, and other applications.

机译：提出了一种新型的无凹陷增强型AlGaN / GaN高电子迁移率晶体管（HEMT）。该器件具有一个现场组装结构（FAS），该结构由一个短的肖特基源极手指和一个上覆栅极组成，可以调制源极下方的电势。这种结构能够操纵源极势垒高度，从而调节流过反向源极-漏极肖特基势垒二极管的电流。根据分析模型和详细的仿真，所提出的FAS-HEMT在功率转换器，单片微波集成电路和其他应用中具有巨大的潜力。

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来源
《Journal of Computational Electronics》 |2019年第4期|1251-1258|共8页
作者
Wang Zeheng;
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作者单位

Univ Elect Sci & Technol China Sch Informat & Software Engn Chengdu 610054 Peoples R China;

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原文格式 PDF
正文语种 eng
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关键词
GaN; Enhancement mode; HEMT; Field-assembled structure;

机译：氮化镓;增强模式;HEMT;现场组装结构;

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专利

1. Enhancement-mode AIGaN/GaN HEMT and MIS-HEMT technology [J] . Kevin J. Chen, Chunhua Zhou Physica status solidi . 2011,第2期

机译：增强模式AIGaN / GaN HEMT和MIS-HEMT技术
2. Proposal of a novel enhancement type AlGaN/GaN HEMT using recess-free field coupled gate [J] . Wang Zeheng, Cao Jun, Wang Fangzhou, Superlattices and microstructures . 2018,第OCTa期

机译：使用无凹陷场耦合栅极的新型增强型AlGaN / GaN HEMT的提案
3. 2D Simulation Study of DC and RF Characteristics of Double Heterostructure AIGaN/GaN DG-HEMT Device for High-Frequency Application [J] . A. B. Khan, M. Sharma, S. G. Anjum, Materials Focus . 2017,第5期

机译：用于高频应用的双异质结构AIGaN / GaN DG-HEMT器件的DC和RF特性的二维仿真研究
4. Defect Distribution Study of AIGaN/GaN HEMT Structures for High Power Applications [C] . J. Drobný, P. Benko, A. Kósal, International Conference on Advanced Semiconductor Devices and Microsystems . 2018

机译：用于大功率应用的AIGaN / GaN HEMT结构的缺陷分布研究
5. Fabrication Technology and Device Simulation of Enhancement-mode AlGaN/GaN Transistors. [D] . Chen, Hongwei. 2012

机译：增强型AlGaN / GaN晶体管的制造技术和器件仿真。
6. Investigation of Recessed Gate AlGaN/GaN MIS-HEMTs with Double AlGaN Barrier Designs toward an Enhancement-Mode Characteristic [O] . Tian-Li Wu, Shun-Wei Tang, Hong-Jia Jiang 2020

机译：面向增强模式特性的具有双AlGaN势垒设计的嵌入式栅AlGaN / GaN MIS-HEMT研究
7. Suppression of the Backgating Effect of Enhancement-Mode p-GaN HEMTs on 200-mm GaN-on-SOI for Monolithic Integration [O] . Xiangdong Li, Marleen Van Hove, Ming Zhao, 2018

机译：抑制增强型P-GaN HEMTS对200毫米GAN-ON-SOI进行单片集成的电阻效应

Proposal of a novel recess-free enhancement-mode AIGaN/GaN HEMT with field-assembled structure: a simulation study

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