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首页> 外文期刊>Journal of Computational Electronics >Analysis of microwave noise in an enhancement-mode dual-quantum-well InAs HEMT
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Analysis of microwave noise in an enhancement-mode dual-quantum-well InAs HEMT

机译：增强型双量子阱InAs HEMT中的微波噪声分析

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摘要

A systematic theoretical study is carried out on the microwave noise performance of an InAs-based dual-quantum-well double-gate high-electron mobility transistor. The proposed dual-quantum-well HEMT shows prominent small-signal analog/radiofrequency (RF) and noise performance. The results for a device with a gate length of 30 nm reveal enhancement-mode operation with a threshold voltage (V-t) of 0.146 V and high transconductance of 4.77 S/mm along with a cutoff frequency (f(t)) of 810 GHz and maximum oscillation frequency (f(max)) of 900 GHz for V-ds = 0.5 V with reduced parasitic capacitance (C-gg) of 0.003 pF/mm. The high-frequency noise of this device is estimated from the gate and drain noise spectral densities evaluated by a Green's function method under varying bias conditions. This device shows a minimum noise figure-(NFmin) of 1.62 dB in combination with an equivalent noise resistance of 972 Omega at 810 GHz for V-gs = 0.6 V and V-ds = 0.5 V, which is relatively low and suitable for the design of low-noise amplifiers for use in high-frequency applications. This study shows that such an InAs HEMT with a dual-quantum-well structure is highly suitable for use in higher-frequency applications that require low noise.
机译：对基于InAs的双量子阱双栅高电子迁移率晶体管的微波噪声性能进行了系统的理论研究。拟议中的双量子阱HEMT具有出色的小信号模拟/射频（RF）和噪声性能。栅极长度为30 nm的器件的结果表明，增强模式操作的阈值电压（Vt）为0.146 V，高跨导为4.77 S / mm，截止频率（f（t））为810 GHz和V-ds = 0.5 V时最大振荡频率（f（max））为900 GHz，而寄生电容（C-gg）减小了0.003 pF / mm。该器件的高频噪声由格林函数方法在变化的偏置条件下评估的栅极和漏极噪声频谱密度估算得出。当V-gs = 0.6 V和V-ds = 0.5 V时，该器件的最小噪声指数（NFmin）为1.62 dB，在810 GHz时的等效噪声电阻为972 Omega，相对较低，适合于用于高频应用的低噪声放大器的设计。这项研究表明，这种具有双量子阱结构的InAs HEMT非常适合用于要求低噪声的高频应用。

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