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首页> 外文期刊>Journal of Computational Electronics >A full 3D model of the modulation efficiency of a submicron complementary metal-oxide-semiconductor (CMOS)-compatible interleaved-junction optical phase shifter
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A full 3D model of the modulation efficiency of a submicron complementary metal-oxide-semiconductor (CMOS)-compatible interleaved-junction optical phase shifter

机译：兼容亚微米互补金属氧化物半导体（CMOS）的交错结光学移相器的调制效率的完整3D模型

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摘要

The optimization of the performance of optical modulators requires reasonably accurate predictive models for key figures of merit. The interleaved PN junction topology offers the maximum mode/junction overlap and enables the most efficient modulators for depletion-mode operation. Due to the structure of such devices, accurate modeling must be fully three dimensional (3D), representing a nontrivial computational problem. A rigorous 3D model for the modulation efficiency of a silicon-on-insulator interleaved-junction optical phase modulator with submicron dimensions is presented herein. The drift-diffusion and Poisson's equations are solved on a 3D finite-element mesh, while Maxwell's equations are solved using the finite-difference time-domain method on 3D Yee cells. The entire modeling process is presented in detail, and all the coefficients required by the model are presented. The model validation suggests < 10% root-mean-square (RMS) error.
机译：光调制器性能的优化需要关键品质因数的合理准确的预测模型。交错的PN结拓扑结构提供了最大的模式/结重叠，并使最有效的调制器用于耗尽模式操作。由于此类设备的结构，准确的建模必须完全是三维（3D），这代表了一个重要的计算问题。本文介绍了具有亚微米尺寸的绝缘体上硅交错结光学相位调制器的调制效率的严格3D模型。在3D有限元网格上求解漂移扩散方程和Poisson方程，而在3D Yee单元上使用有限差分时域方法求解Maxwell方程。详细介绍了整个建模过程，并介绍了模型所需的所有系数。模型验证表明<10％的均方根（RMS）误差。

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