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首页> 外文期刊>Journal of Computational Electronics >Simulation study of an optimized current matching for In_(0.39)Ga_(0.61)N/In_(0.57)Ga_(0.43)N/IN_(0.74)Ga_(0.26)N triple-junction solar cells
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Simulation study of an optimized current matching for In_(0.39)Ga_(0.61)N/In_(0.57)Ga_(0.43)N/IN_(0.74)Ga_(0.26)N triple-junction solar cells

机译：用于IN_（0.39）GA_（0.61）N / IN_（0.57）GA_（0.43）N / IN_（0.74）GA_（0.26）N三界太阳能电池的优化电流匹配的仿真研究

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摘要

This paper deals with the design and optimization of a triple-junction (TJ) solar cell using indium gallium nitride (InGaN) material. Two tunnel diodes are used to ensure connection between the different subcells. A comprehensive study is performed by means of 2D numerical simulations to locate the best bandgap combination that leads to an optimized current matching. During the simulations, the doping concentration and the base thickness are considered as fitting parameters for the top and the middle subcells. The In0.39Ga0.61N/In0.57Ga0.43N/In0.74Ga0.26N bandgap combination is supposed to be 2.02 eV/1.52 eV/1.13 eV. A high short-circuit current density (13.313 mA/cm(2)) is achieved by assuming a base thickness of 1 mu m for each subcell and a p/n doping ratio of 5 x 10(18) cm(-3)/5 x 10(15) cm(-3) in the top cell, 1.5 x 10(19) cm(-3)/1.5 x 10(16) cm(-3) in the middle cell, and 7.5 x 10(18) cm(-3)/7.5 x 10(15) cm(-3) in the bottom cell. The optimized structure has an improved open-circuit voltage (2.877 V), fill factor (83%), and conversion efficiency (33.11%).
机译：本文涉及使用氮化镓（INGAN）材料的三码（TJ）太阳能电池的设计和优化。两个隧道二极管用于确保不同子单元之间的连接。通过2D数值模拟进行全面的研究，以找到导致优化电流匹配的最佳带隙组合。在模拟期间，掺杂浓度和基础厚度被认为是顶部和中间电池的拟合参数。 IN0.39Ga0.61N / IN0.57GA0.43N / IN0.74GA0.26N带隙组合应该是2.02EV / 1.52 EV / 1.13 EV。通过假设每个子单元的基础厚度为1μm，AP / n掺杂比为5×10（18）cm（-3）/ 5 X 10（15）cm（-3）在顶部电池中，中间细胞中1.5×10（19）厘米（-3）/ 1.5×10（16）厘米（-3），7.5×10（18）底部电池中的cm（-3）/ 7.5×10（15）cm（-3）。优化的结构具有改进的开路电压（2.877 V），填充因子（83％）和转换效率（33.11％）。

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