Temperature induced anomalous exciton localization in InGaN/GaN and GaN/AlInN quantum wells

著录项

• 来源
  《Journal of Computational Electronics》 |2018年第1期|373-381|共9页
• 作者

  Md. Soyaeb Hasan; Md. Sherajul Islam; Md. Rafiqul Islam; Ibrahim Mustafa Mehedi; Takayuki Makino;

  展开▼
• 作者单位

  Electrical and Electronic Engineering, Khulna University of Engineering and Technology;

  Electrical and Electronic Engineering, Khulna University of Engineering and Technology;

  Electrical and Electronic Engineering, Khulna University of Engineering and Technology;

  Electrical and Computer Engineering, King Abdulaziz University;

  Electrical and Electronic Engineering, University of Fukui;

  展开▼
• 收录信息
• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  Photoluminescence; Exciton localization; InGaN/GaN; Quantum well;

  机译：光致发光激子局域InGaN / GaN量子阱;