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首页> 外文期刊>Journal of Computational Electronics >Strain engineering of band dispersion and dielectric response of monolayer and bilayer AIN
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Strain engineering of band dispersion and dielectric response of monolayer and bilayer AIN

机译：单层和双层AIN的色散和介电响应的应变工程

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摘要

The strain-induced modulation of the band dispersion and dielectric response of monolayer and bilayer AlN was studied using density functional theory. The results showed that, by applying strain on monolayer and bilayer AlN, the bandgap of these nanostructures can be controlled. Calculations of the dielectric response show that application of in-plane tensile (compressive) strain causes a red (blue) shift in the epsilon(2)(omega) spectrum of both monolayer and bilayer AlN. Applying perpendicular strain on bilayer AlN leads to a shift of the valence-band maximum to the Gamma-point in the band structure and shift of the peak positions and variation of the peak intensities in the epsilon(2)(omega) spectrum. The predicted tunability of the bandgap and dielectric response by strain application may lead to a wide range of applications for monolayer and bilayer AlN nanosheets in electronic and optoelectronic devices.
机译：利用密度泛函理论研究了应变诱导的单层和双层AlN的色散和介电响应的调制。结果表明，通过在单层和双层AlN上施加应变，可以控制这些纳米结构的带隙。介电响应的计算表明，施加面内拉伸（压缩）应变会导致单层和双层AlN的epsilon（2）Ω光谱发生红色（蓝色）偏移。在双层AlN上施加垂直应变会导致价带最大值移至能带结构中的Gamma点，并导致epsilon（2）（ω）谱中峰位置的移动以及峰强度的变化。带隙和介电响应的应变可预测的可调谐性可能会导致电子和光电设备中单层和双层AlN纳米片的广泛应用。

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