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首页> 外文期刊>Journal of Computational Electronics >Investigation of a novel SOI LDMOS using p+ buried islands in the drift region by numerical simulations
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Investigation of a novel SOI LDMOS using p+ buried islands in the drift region by numerical simulations

机译：通过数值模拟研究在漂移区中使用p +掩埋岛的新型SOI LDMOS

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摘要

A novel SOI LDMOS with p+ buried islands and p-top layer in the drift region (PBI SOI) is proposed in this letter. At off-state, the high potential is induced from the drain region to the inside of the drift region. The p+ buried islands cause reduced surface field effect and modulate the electric field distribution in the drift region. The buried p-top layer withstands the lateral drain voltage. Thus, the breakdown voltage (BV) of PBI SOI is significantly improved. Meanwhile, the specific on-resistance (R-on,R-sp) is reduced by improving doping concentration of the drift region, owing to the assisting depletion effect caused by the p+ buried islands. Consequently, the R-on,R-sp of the proposed structure is reduced by 53.7% compared with the conventional SOI LDMOS at the same half-pitch size, the BV and the figure-of-merit (FOM = BV2/R-on,R-sp) are observably improved by 24.8% and 235.9% respectively.
机译：本文提出了一种新颖的SOI LDMOS，其在漂移区具有p +埋入的岛和p顶层（PBI SOI）。在截止状态下，从漏极区到漂移区内部感应出高电位。 p +埋入的岛引起减小的表面场效应并调节漂移区中的电场分布。掩埋的p顶层可以承受横向漏极电压。因此，PBI SOI的击穿电压（BV）显着提高。同时，归因于由p +掩埋岛引起的辅助耗尽效应，通过提高漂移区的掺杂浓度来降低比导通电阻（R-on，R-sp）。因此，在相同的半节距尺寸，BV和品质因数（FOM = BV2 / R-on）下，与传统的SOI LDMOS相比，所提出结构的R-on，R-sp降低了53.7％。 ，R-sp）分别改善了24.8％和235.9％。

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  • 来源
    《Journal of Computational Electronics》 |2018年第2期|646-652|共7页
  • 作者

    Lei Jianmei; Hu Shengdong; Yang Dong; Huang Ye; Yuan Qi; Guo Jingwei; Zeng Linghui; Wang Siqi; Yang Xuan;

  • 作者单位

    China Automot Engn Res Inst Co Ltd, State Key Lab Vehicle NVH & Safety Technol, Chongqing 401122, Peoples R China;

    Chongqing Univ, Coll Commun Engn, Minist Educ, Key Lab Dependable Serv Comp Cyber Phys Soc, Chongqing 400044, Peoples R China;

    Chongqing Univ, Coll Commun Engn, Minist Educ, Key Lab Dependable Serv Comp Cyber Phys Soc, Chongqing 400044, Peoples R China;

    Chongqing Univ, Coll Commun Engn, Minist Educ, Key Lab Dependable Serv Comp Cyber Phys Soc, Chongqing 400044, Peoples R China;

    Chongqing Univ, Coll Commun Engn, Minist Educ, Key Lab Dependable Serv Comp Cyber Phys Soc, Chongqing 400044, Peoples R China;

    Chongqing Univ, Coll Commun Engn, Minist Educ, Key Lab Dependable Serv Comp Cyber Phys Soc, Chongqing 400044, Peoples R China;

    Chongqing Univ, Coll Commun Engn, Minist Educ, Key Lab Dependable Serv Comp Cyber Phys Soc, Chongqing 400044, Peoples R China;

    Chongqing Univ, Coll Commun Engn, Minist Educ, Key Lab Dependable Serv Comp Cyber Phys Soc, Chongqing 400044, Peoples R China;

    Chongqing Univ, Coll Commun Engn, Minist Educ, Key Lab Dependable Serv Comp Cyber Phys Soc, Chongqing 400044, Peoples R China;

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  • 正文语种 eng
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  • 关键词

    SOI LDMOS; Breakdown voltage; Specific on-resistance; RESURF; p plus buried island;

    机译：SOI LDMOS;击穿电压;比导通电阻;RESURF;p加上掩埋的岛;

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