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首页> 外文期刊>Journal of Computational Electronics >A novel Schottky contact super barrier rectifier with a top N-enhancement layer and a P-injector
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A novel Schottky contact super barrier rectifier with a top N-enhancement layer and a P-injector

机译:具有顶部N增强层和P注入器的新型肖特基接触超势垒整流器

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摘要

A novel Schottky contact super barrier rectifier (SSBR) with a top N-enhancement layer and a P-injector (P-TNEL-SSBR) is proposed and investigated by simulation. In addition to the concept of SSBR we presented recently, the proposed P-TNEL-SSBR has an extra P-injector structure and a top NEL design (INEL, a modified structure of the N-enhancement layer we proposed earlier). The P-injector structure makes this new rectifier have the conductivity modulation effect by hole injection at large forward current densities which will be helpful for surge current capability. The INEL decreases the barrier capacitance during the reverse recovery state and weakens the JFET effect further in the forward conducting state. Simulation results show that, with almost the same reverse leakage current density and breakdown voltage of approximately 57 V, P-TNEL-SSBR increases the figure of merit (FOM, equates to V-B(2)/R-on,R- sp) by 11.1% at the forward current density of 200 A/cm(2) and decreases the reverse recovery time by 13.3% at the reverse voltage of 12 V compared to those of NEL-SSBR we reported earlier.
机译:提出了一种新型的肖特基接触超势垒整流器(SSBR),该整流器具有顶部N增强层和P注入器(P-TNEL-SSBR),并通过仿真进行了研究。除了我们最近提出的SSBR概念之外,拟议的P-TNEL-SSBR还具有额外的P注入器结构和顶部NEL设计(INEL,我们之前提出的N增强层的改进结构)。 P注入器结构使这种新型整流器在大的正向电流密度下通过空穴注入具有电导率调制效果,这将有助于提高浪涌电流能力。 INEL在反向恢复状态下会减小势垒电容,并在正向导电状态下进一步削弱JFET效应。仿真结果表明,在几乎相同的反向漏电流密度和大约57 V的击穿电压下,P-TNEL-SSBR的品质因数(FOM,等于VB(2)/ R-on,R-sp)增加了与我们先前报道的NEL-SSBR相比,在200 A / cm(2)的正向电流密度下为11.1%,在12 V的反向电压下,反向恢复时间减少了13.3%。

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