...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Journal of Computational Electronics >The effect of sharp-corner emendation of irregular FinFETs on electrothermal characteristics
【24h】

The effect of sharp-corner emendation of irregular FinFETs on electrothermal characteristics

机译：不规则FinFET的尖角修正对电热特性的影响

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

The present study is an attempt to investigate the impacts of channel modification and the capabilities of amended sharp-corner FinFETs from thermal and electrical points of view. It also provides a new definition for gate-oxide and channel capacitance of irregular fin shape by replacing the contribution of each area in the total gate capacitance expression of the square FinFET. This definition determines the subthreshold reliability of the amended sharp-corner FinFETs. As a function of gate insulator capacitance, channel capacitance, depletion charge per unit length, and fin area, mobile electron concentrations are derived for amended sharp-corner FETs by assuming an arbitrary channel potential profile to simplify the formulation. The comparison results demonstrate that an amended FinFET with a partial cylindrical shape at the top region of fin (PC-FinFET) by higher gate controllability adjusts the hot carrier effects, reduces DIBL, improves the subthreshold characteristics as well as short-channel effects, while the amended-channel FinFET with extended round-bottom region reduces the self-heating effects, attenuates the thermal resistance, and moderates the thermal dependence of electrical characteristics. Therefore, it is deduced that modified-channel FinFET (MC-FinFET), with both cylindrical top and extended bottom regions, has improved thermal and electrical stabilities in both subthreshold and saturation modes in comparison with a conventional thin-film FinFET. The superiority of the MC-FinFET, which was evaluated with three-dimensional simulations, demonstrates the ability of this structure as a high-performance device over the other eliminated sharp-corner FinFETs.
机译：本研究旨在从热学和电学的角度研究通道修改的影响以及修正的尖角FinFET的功能。通过替换方形FinFET的总栅极电容表达式中的每个区域的贡献，它还为不规则鳍状的栅极氧化物和沟道电容提供了新的定义。该定义确定了修改后的尖角FinFET的亚阈值可靠性。作为栅极绝缘体电容，沟道电容，每单位长度的耗尽电荷和鳍面积的函数，通过假定任意沟道电势曲线来简化配方，从而得出修正的尖角FET的移动电子浓度。比较结果表明，通过更高的栅极可控性，在鳍片顶部区域具有部分圆柱形状的修正FinFET（PC-FinFET）调整了热载流子效应，减小了DIBL，改善了亚阈值特性以及短沟道效应，而具有扩展的圆底区域的修正通道FinFET降低了自热效应，减弱了热阻，并缓和了电气特性对热的依赖性。因此，可以推断，与常规薄膜FinFET相比，具有圆柱形顶部区域和底部扩展区域的改进型沟道FinFET（MC-FinFET）在亚阈值和饱和模式下均具有改善的热稳定性和电稳定性。 MC-FinFET的优越性（已通过三维仿真进行了评估）证明了这种结构作为高性能器件的能力，优于其他淘汰的尖角FinFET。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号