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首页> 外文期刊>Journal of Computational Electronics >Atomistic Modeling Of The Electrostatic And Transport Properties Of A Simplified Nanoscale Field Effect Transistor
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Atomistic Modeling Of The Electrostatic And Transport Properties Of A Simplified Nanoscale Field Effect Transistor

机译：简化的纳米级场效应晶体管的静电和输运特性的原子建模

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A first-principle model is proposed to study the electrostatic properties of a double-gated silicon slab of nano scale in the framework of density functional theory. The applied gate voltage is approximated as a variation of the electrostatic potential on the boundary of the supercell enclosing the system. With the electron density estimated by the real space Green's functions, efficient multigrid and fast Fourier-Poisson solvers are employed to calculate the electrostatic potential from the charge density. In the representation of localized SIESTA linear combination of atomic or-bitals, the Kohn-Sham equation is established and solved self-consistently for the wavefunction of the system in the local density approximation. The transmission for ballistic transport across the atomic silicon slab at small bias is calculated. The charge distribution and electrostatic potential profile in the silicon slab versus the gate voltage are then analyzed with the help of the equivalent capacitive model. Quantum confinement and short gate effects are observed and discussed.
机译：提出了第一性原理模型，在密度泛函理论的框架下研究了纳米级双栅硅平板的静电性能。施加的栅极电压近似为围绕系统的超级电池边界上静电势的变化。利用由实际空间格林函数估算的电子密度，可以使用高效的多重网格和快速傅里叶-泊松求解器从电荷密度计算静电势。用原子轨道的局部SIESTA线性组合表示，建立了Konn-Sham方程，并在局部密度近似中针对系统的波函​​数自洽求解。计算了在小偏差下弹道传输穿过原子硅平板的传输率。然后借助等效电容模型分析硅平板中的电荷分布和静电势分布与栅极电压的关系。观察和讨论了量子限制和短栅极效应。

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