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首页> 外文期刊>Journal of Computational Neuroscience >Analysis of nerve conduction block induced by direct current
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Analysis of nerve conduction block induced by direct current

机译：直流电引起的神经传导阻滞分析

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The mechanisms of nerve conduction block induced by direct current (DC) were investigated using a lumped circuit model of the myelinated axon based on Frankenhaeuser-Huxley (FH) model. Four types of nerve conduction block were observed including anodal DC block, cathodal DC block, virtual anodal DC block, and virtual cathodal DC block. The concept of activating function was used to explain the blocking locations and relation between these different types of nerve block. Anodal/cathodal DC blocks occurred at the axonal nodes under the block electrode, while virtual anodal/cathodal DC blocks occurred at the nodes several millimeters away from the block electrode. Anodal or virtual anodal DC block was caused by hyperpolarization of the axon membrane resulting in the failure of activating sodium channels by the arriving action potential. Cathodal or virtual cathodal DC block was caused by depolarization of the axon membrane resulting in inactivation of the sodium channel. The threshold of cathodal DC block was lower than anodal DC block in most conditions. The threshold of virtual anodal/cathodal blocks was about three to five times higher than the threshold of anodal/cathodal blocks. The blocking threshold was decreased with an increase of axonal diameter, a decrease of electrode distance to axon, or an increase of temperature. This simulation study, which revealed four possible mechanisms of nerve conduction block in myelinated axons induced by DC current, can guide future animal experiments as well as optimize the design of electrodes to block nerve conduction in neuro-prosthetic applications.
机译：使用基于Frankenhaeuser-Huxley（FH）模型的髓鞘轴突集总电路模型研究了直流电（DC）诱导的神经传导阻滞的机制。观察到四种类型的神经传导阻滞，包括阳极DC阻滞，阴极DC阻滞，虚拟阳极DC阻滞和虚拟阴极DC阻滞。激活功能的概念用于解释这些不同类型的神经阻滞之间的阻滞位置和关系。阳极/阴极DC块发生在块状电极下方的轴突节点处，而虚拟阳极/阴极DC块发生在距块状电极几毫米远的节点处。阳极或虚拟阳极DC阻滞是由轴突膜的超极化引起的，导致到达的动作电位无法激活钠通道。阴极或虚拟阴极DC阻滞是由轴突膜的去极化引起的，从而导致钠通道失活。在大多数情况下，阴极DC阻隔的阈值低于阳极DC阻隔。虚拟阳极/阴极阻滞的阈值大约比阳极/阴极阻滞的阈值高三到五倍。随着轴突直径的增加，到轴突的电极距离的减少或温度的升高，阻断阈值降低。这项模拟研究揭示了直流电流引起的髓鞘轴突中神经传导阻滞的四种可能机制，可以指导未来的动物实验，并优化在神经修复应用中阻断神经传导的电极设计。

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