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首页> 外文期刊>Journal of Crystal Growth >Effect of substrate temperature on the formation of CdO composite in CdS-doped SiO_2 films as deposited by PLD
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Effect of substrate temperature on the formation of CdO composite in CdS-doped SiO_2 films as deposited by PLD

机译：基板温度对PLD沉积CdS掺杂SiO_2薄膜中CdO复合物形成的影响

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摘要

Thin films of CdS-doped SiO_2 glass were prepared on silicon substrates by using the conventional pulsed laser deposition (PLD) technique employing a dual-material rotating target. The optical and structural properties of the as- prepared films under various substrate temperature were analyzed by photoluminescence, atomic force microscopy and X-ray diffraction. The appearance of the satellite CdO sites in the films was found to be closely related to the substrate Temperature during deposition. Experimental results showed that the optimum substrate temperature to yield good Quality crystalline films free from the CdO sites was between 200 deg. C and 300 deg. C.
机译：通过使用采用双材料旋转靶材的常规脉冲激光沉积（PLD）技术，在硅基板上制备了CdS掺杂的SiO_2玻璃薄膜。通过光致发光，原子力显微镜和X射线衍射分析了在各种基板温度下所制备的膜的光学和结构性质。发现膜中卫星CdO位置的出现与沉积过程中的基板温度密切相关。实验结果表明，获得无CdO位置的高质量结晶膜的最佳衬底温度为200度。摄氏300度C。

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