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首页> 外文期刊>Journal of Crystal Growth >Investigations into growth of semiconductor crystals with high microhomogeneity of properties under microgravity simulating conditions
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Investigations into growth of semiconductor crystals with high microhomogeneity of properties under microgravity simulating conditions

机译:在微重力模拟条件下高特性微同质半导体晶体生长的研究

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摘要

The updated version of the Bridgman method ensuring a reduced level of thermal convection in a melt under terrestrial conditions is presented. Automated control of crystal growth process has been realized for this method. Crystallization took place at programmable heat removal from a melt. Striation -free germanium single crystals, doped With gallium, with high microhomogeneity of properties were grown. Effect of vibrations, applied to a melt, on Microhomogeneity of dopant distribution in a crystal was investigated.
机译:介绍了Bridgman方法的更新版本,该方法可确保在陆地条件下降低熔体中的热对流水平。该方法已经实现了晶体生长过程的自动控制。在从熔体中以可编程的热量去除下发生结晶。生长了掺有镓的无条纹的锗单晶,该单晶具有很高的微同质性。研究了施加到熔体上的振动对晶体中掺杂物分布的微观均匀性的影响。

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