Optical properties of GaAs/GaN_xAs_1-x quantum well structures grown by migration-enhanced epitaxy

Y. G. Hong; C. W. Tu

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Optical properties of GaAs/GaN_xAs_1-x quantum well structures grown by migration-enhanced epitaxy

机译：通过迁移增强外延生长的GaAs / GaN_xAs_1-x量子阱结构的光学性质

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摘要

ptical properties of GaN_0.018As_0.982 quantum wells grown by either migration-enhanced epitaxy (MEE) or molecular beam epitaxy have been compared. MEE samples exhibit significantly enhanced photoluminescence (PL) intensity, reduced PL line width, and reduced PL low-energy tail, which could be correlated to better composition homogeneity.

机译：比较了通过迁移增强外延（MEE）或分子束外延生长的GaN_0.018As_0.982量子阱的物理性质。 MEE样品显示出显着增强的光致发光（PL）强度，减小的PL线宽和减少的PL低能尾巴，这可能与更好的成分均匀性相关。

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来源
《Journal of Crystal Growth》 |2002年第2期|p.29-34|共6页
作者
Y. G. Hong; C. W. Tu;
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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类晶体学;
关键词
A1. Photoluminescence; A3. Migration enhanced epitaxy; A3. Quantum wells;

机译：A1。光致发光;A3。迁移增强了外延;A3。量子阱;

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2. Comparison of structural and optical properties of InAs quantum dots grown by migration-enhanced molecular-beam epitaxy and conventional molecular-beam epitaxy [J] . N. K. Cho, S. P. Ryu, J. D. Song, Applied Physics Letters . 2006,第13期

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3. Optical properties of GaAs_(1-x)Bi_x/GaAs quantum well structures grown by molecular beam epitaxy on (100) and (311)B GaAs substrates [J] . Gunes M., Ukelge M. O., Donmez O., Semiconductor science and technology . 2018,第12期

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Optical properties of GaAs/GaN_xAs_1-x quantum well structures grown by migration-enhanced epitaxy

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