Variations in critical coverage for InAs/GaAs quantum dot formation in bilayer structures

P. B. Joyce; T. J. Krzyzewski; P. H. Steans

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Variations in critical coverage for InAs/GaAs quantum dot formation in bilayer structures

机译：双层结构中InAs / GaAs量子点形成的临界覆盖率变化

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摘要

Reflection high-energy electron diffraction and scanning tunnelling microscopy (STM) have been used to study InAs/ GaAs quantum dot (QD) formation in bilayer QD structures grown by molecular beam epitaxy on GaAs(0 0 1) substrates. For GaAs spacer layers thicknesses <200 A, there is a reduction in the critical coverage (θ_crit) required to form the second layer QDs, the change in θ_crit compared with first layer growth depending on the size of the QDs in the initial layer. STM measurements of the uncapped QDs show that second layer dots grown on thick GaAs spacer layers (>200 A) are identical to those grown in the first layer.

机译：反射高能电子衍射和扫描隧道显微镜（STM）已用于研究通过分子束外延在GaAs（0 0 1）衬底上生长的双层QD结构中InAs / GaAs量子点（QD）的形成。对于厚度小于200 A的GaAs间隔层，形成第二层QD所需的临界覆盖率（θ_crit）减小，与第一层生长相比，θ_crit的变化取决于初始层中QD的大小。未封盖的量子点的STM测量表明，在较厚的GaAs隔离层（> 200 A）上生长的第二层点与在第一层中生长的点相同。

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来源
《Journal of Crystal Growth》 |2002年第1期|p.39-48|共10页
作者
P. B. Joyce; T. J. Krzyzewski; P. H. Steans;
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作者单位

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类晶体学;
关键词
A1. Surface processes; A3. Molecular beam epitaxy; A3. Quantum dots; B1. Arsenates;

机译：A1。表面工艺;A3。分子束外延;A3。量子点;B1。砷酸盐;

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专利

1. A detailed investigation on the impact of variation in growth rate, monolayer coverage and barrier thickness on the optical characteristics of InAs/GaAs bilayer quantum dot heterostructures [J] . N. Basu, K. Ghosh, S. Kabi, Superlattices and microstructures . 2013,第may期

机译：详细研究生长速率，单层覆盖率和势垒厚度变化对InAs / GaAs双层量子点异质结构光学特性的影响
2. Effects of ex situ annealing on quaternary alloy (InAlGaAs) capped InAs/GaAs quantum dot heterostructures on optimization of optoelectronic and structural properties with variation in growth rate, barrier thickness, and seed quantum dot monolayer coverage [J] . A. Mandal, U. Verma, S. Chakrabarti Superlattices and microstructures . 2013,第juna期

机译：异位退火对四元合金（InAlGaAs）封盖的InAs / GaAs量子点异质结构的影响，随着生长速率，势垒厚度和种子量子点单层覆盖率的变化，优化了光电和结构性能
3. Thermal stability of quaternary alloy (InAlGaAs)-capped InAs/GaAs multilayer quantum dot heterostructures with variation in growth rate, barrier thickness, seed quantum dot monolayer coverage, and post-growth annealing [J] . A. Mandal, U. Verma, S. Chakrabarti Applied Physics . 2013,第1期

机译：四元合金（InAlGaAs）封顶的InAs / GaAs多层量子点异质结构的热稳定性，其生长速率，势垒厚度，种子量子点单层覆盖率和生长后退火均会发生变化
4. A detailed investigation on the Impact of variation in Monolayer coverage on Optical properties of InAs/GaAs Multilayer Quantum Dot heterostructure [C] . Aditya Patel, Debiprasad Panda, Suryansh Dongre, Conference on Low-Dimensional Materials and Devices . 2019

机译：详细研究单层覆盖变异对INAS / GaAs多层量子点异质结构的光学性质的影响
5. Exploring Single Hole States in InAs/GaAs Quantum Dots and Quantum Dot Molecules under 2-D Electric Fields [D] . Ma, Xiangyu. 2018

机译：在2-D电场下探索InAs / GaAs量子点和量子点分子中的单孔状态
6. Comparative Study of Photoelectric Properties of Metamorphic InAs/InGaAs and InAs/GaAs Quantum Dot Structures [O] . Sergii Golovynskyi, Luca Seravalli, Oleksandr Datsenko, 2017

机译：变质InAs / InGaAs和InAs / GaAs量子点结构的光电性能比较研究
7. Comparison of single-layer and bilayer InAs/GaAs quantum dots with a higher InAs coverage [O] . SENGUPTA S, SHAH SY, HALDER N, 2010

机译：具有更高InAs覆盖率的单层和双层InAs / GaAs量子点的比较

Variations in critical coverage for InAs/GaAs quantum dot formation in bilayer structures

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