Fabrication of silicon-on-AlN novel structure and its residual strain characterization

Zhenghua An; Chuanling Men; Xinyun Xie

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Fabrication of silicon-on-AlN novel structure and its residual strain characterization

机译：AlN硅新型结构的制备及其残余应变表征

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Self-heating effects in silicon-on-insulator (SOI) devices limit the applicability of SOI materials in electronics in cases where high power consumption is expected. AlN becomes a promising alternative to SiO_2 layer in traditional SOI materials. For the first time, a novel silicon-on-aluminum-nitride (SOAN) structure has been fabricated by the smart- cut process to alleviate the self-heating effects. The AlN films were synthesized on 4'' Si(1 0 0) substrate by ion-beam- enhanced deposition technique, followed by the smart-cut process.

机译：绝缘体上硅（SOI）器件中的自热效应会限制SOI材料在电子器件中的应用，因为这些器件的功耗很高。 AlN成为传统SOI材料中SiO_2层的有希望的替代品。首次通过智能切割工艺制造了一种新型的氮化铝硅（SOAN）结构，以减轻自热效应。通过离子束增强沉积技术，在4''Si（1 0 0）衬底上合成AlN膜，然后进行智能切割工艺。

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来源
《Journal of Crystal Growth》 |2002年第1期|p.27-32|共6页
作者
Zhenghua An; Chuanling Men; Xinyun Xie;
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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类晶体学;
关键词
A1. High resolution X-ray diffraction; A3. Ion-beam-enhanced deposition; B1. Nitrides;

机译：A1。高分辨率X射线衍射;A3。离子束增强沉积;B1。氮化物;

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Fabrication of silicon-on-AlN novel structure and its residual strain characterization

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