Diffusion-limited growth of single- and double-octahedral voids in silicon and the effect of surface oxygen monolayer

V.V.Voronkov; R.Falster

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Diffusion-limited growth of single- and double-octahedral voids in silicon and the effect of surface oxygen monolayer

机译：硅中单八面体和双八面体空隙的扩散受限生长以及表面氧单层的影响

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摘要

The density of grown-in voids produced in silicon is controlled by a diffusion-limited flux of vacancies to the voids. This flux was computed for both single- and double-octahedral voids. It was found that if a void is initially formed as a Double octahedron it would evolve into stable shape which is different from that which is observed experimentally.

机译：在硅中产生的生长的空洞的密度由空洞的扩散限制通量控制。计算单八面体和双八面体空隙的通量。已经发现，如果最初形成为双八面体的空隙，它将演变成稳定的形状，这与实验观察到的形状不同。

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来源
《Journal of Crystal Growth》 |2001年第3期|p.192-202|共11页
作者
V.V.Voronkov; R.Falster;
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作者单位

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类晶体学;
关键词
A1.Adsorption; Diffusion; A1.Point defects; A1.Surface processes;

机译：A1。吸附;扩散;A1。点缺陷;A1。表面处理;

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Diffusion-limited growth of single- and double-octahedral voids in silicon and the effect of surface oxygen monolayer

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