Float zone growth and characterization of Ge_1-xSi_x (x≤10 at/100) single crystals

T.A.Campbell; M.Schweizer; P.Dold

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Float zone growth and characterization of Ge_1-xSi_x (x≤10 at/100) single crystals

机译：Ge_1-xSi_x（x≤10at / 100）单晶的浮区生长和表征

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摘要

Ge_1-xSi_x(x≤10 at/100) single crystals were grown with the float zone technique using a monoellipsoid mirror furnace. The freed rod consisted of pre-synthesized Ge_0.95Si_0.05 polycrystalline material with an initial composition of pure Germanium. Several boron-doped (1-2×10~17 at cm~-3) crystals were grown using <100> Ge seeds

机译：Ge_1-xSi_x（x≤10at / 100）单晶用单椭球镜炉通过浮区技术生长。释放的棒由预先合成的具有纯锗初始组成的Ge_0.95Si_0.05多晶材料组成。使用<100> Ge种子生长了几个硼掺杂的晶体（在cm〜-3处有1-2×10〜17处硼）

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来源
《Journal of Crystal Growth》 |2001年第3期|p.231-239|共9页
作者
T.A.Campbell; M.Schweizer; P.Dold;
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作者单位

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类晶体学;
关键词
A1.Computer simulation; A1.Convection; A1.Morphological stability;

机译：A1。计算机仿真;A1。对流A1。形态稳定性;

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Float zone growth and characterization of Ge_1-xSi_x (x≤10 at/100) single crystals

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