Reduction of threading dislocations in migration enhanced epitaxy grown GaN with N-polarity by use of AIN multiple interlayer

Kazuhide Kusakabe; Katsumi Kishino; Akihiko Kikuchi

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Reduction of threading dislocations in migration enhanced epitaxy grown GaN with N-polarity by use of AIN multiple interlayer

机译：通过使用AIN多层中间层减少迁移增强的外延生长的N极性GaN中的螺纹位错

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摘要

High quality GaN layer was obtained by insertion of high temperature grown AIN multiple intermediate layers with migration enhanced epitaxy method by the RF-plasma assisted molecular beam epitaxy on (0001) sapphire substrates. The propagating behaviors of dislocations were studied, using a transmission electron microscope.

机译：通过用RF等离子体辅助分子束外延在（0001）蓝宝石衬底上插入具有迁移增强外延方法的高温生长的AIN多个中间层，从而获得高质量的GaN层。使用透射电子显微镜研究了位错的传播行为。

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来源
《Journal of Crystal Growth》 |2001年第4期|p.387-391|共5页
作者
Kazuhide Kusakabe; Katsumi Kishino; Akihiko Kikuchi;
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作者单位

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类晶体学;
关键词
A3.Migration enhanced epitaxy; A3.Molecular beam epitaxy; B1.Nitrides;

机译：A3。迁移增强外延;A3。分子束外延;B1氮化物;

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专利

1. Origin of additional threading dislocations in AIGaN grown on GaN using AIN as an interlayer [J] . R. Datta, C. McAleese, P. Cherns, Physica status solidi . 2008,第6期

机译：使用AIN作为中间层在GaN上生长的AIGaN中其他螺纹位错的起源
2. Correlation between threading dislocation density and sheet resistance of AIGaN/AIN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy [J] . Stephen W. Kaun, Man Hoi Wong, Umesh K. Mishra, Applied Physics Letters . 2012,第26期

机译：等离子体辅助分子束外延生长的AlGaN / AIN / GaN异质结构的线位错密度与薄层电阻之间的相关性
3. Strain effects on the intersubband transitions in GaN/AIN multiple quantum wells grown by low-temperature metal organic vapor phase epitaxy with AlGaN interlayer [J] . Hassanet Sodabanlu, Jung-Seung Yang, Masakazu Sugiyama, Applied Physicsletters . 2009,第16期

机译：应变对AlGaN中间层的低温金属有机气相外延生长的GaN / AIN多量子阱中子带间跃迁的影响
4. Origin of additional threading dislocations in AlGaN grown on GaN using AIN as an interlayer [C] . R. Datta, C. McAleese, P. Cherns, International Conference of Nitride Semiconductors . 2008

机译：使用AIN作为中间层在GaN上生长的Algan中额外的线脱臼的起源
5. Reducing Threading Dislocation in GaSb Epilayer Grown on GaAs Substrate for Photovoltaic and Thermophotovoltaic Application [D] . Mansoori, Ahmad. 2019

机译：减少在GaAs底物上生长在GaAs底物上的喘气脱位，用于光伏和蒸煮器应用
6. Intersubband absorption properties of high Al content AlxGa1−xN/GaN multiple quantum wells grown with different interlayers by metal organic chemical vapor deposition [O] . He Hui Sun, Feng Yun Guo, Deng Yue Li, 2012

机译：通过金属有机化学气相沉积法生长具有不同夹层的高Al含量AlxGa1-xN / GaN多量子阱的子带间吸收特性
7. Defect-rich GaN interlayer facilitating the annihilation of threading dislocations in polar GaN crystals grown on (0001)-oriented sapphire substrates [O] . M. Barchuk, M. Motylenko, T. Schneider, 2019

机译：富含缺陷的GaN中间层，促进在（0001）的蓝宝石底板上生长的极性GaN晶体中的螺纹脱位湮灭

Reduction of threading dislocations in migration enhanced epitaxy grown GaN with N-polarity by use of AIN multiple interlayer

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