Characterization of etched facets for GaN-based lasers

M.Scherer; V.Schwegler; M.Seyboth

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Characterization of etched facets for GaN-based lasers

机译：GaN基激光器蚀刻面的特性

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摘要

Dry-etching of laser facets is commonly used for (InAl)GaN/sapphire-based structures since the epitaxial planes of the nitride layers are rotated with respect to the substrate planes making cleaving impractical. To achieve steep and smooth facets by chemically assisted ion beam etching, a 3-layer resist system is developed for patterning.

机译：激光刻面的干法蚀刻通常用于（InAl）GaN /基于蓝宝石的结构，因为氮化物层的外延平面相对于衬底平面旋转，使得切割不可行。为了通过化学辅助离子束蚀刻获得陡峭且光滑的刻面，开发了一种用于构图的三层抗蚀剂系统。

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来源
《Journal of Crystal Growth》 |2001年第4期|p.554-557|共4页
作者
M.Scherer; V.Schwegler; M.Seyboth;
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作者单位

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类晶体学;
关键词
A1.Etching; B1.Nitrides; B3.Laser diodes;

机译：A1。蚀刻;B1氮化物;B3。激光二极管;

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2. Precision UV laser scribing for cleaving mirror facets of GaN-based laser diodes [J] . O. Krueger, J.-H. Kang, M. Spevak, Applied Physics . 2016,第4pta1期

机译：精确的紫外线激光划刻，用于切割GaN基激光二极管的镜面
3. Growth and Characterizations of GaN-Based LEDs Grown on Wet-Etched Stripe-Patterned Sapphire Substrates [J] . KAR WEI NG, JUNG MIN HWANG, KEI MAY LAU Journal of Electronic Materials . 2008,第10期

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4. High quality dry etched InP semiconductor laser facets and characterization using atomic force microscopy [C] . Whaley, R.D., Gopalan, . 1996

机译：高质量干法刻蚀的InP半导体激光刻面和原子力显微镜表征
5. Fabrication and characterization of gallium nitride-based lasers with cleaved and crystallographically-etched facets. [D] . Stocker, Dean A. 1999

机译：具有分裂和晶体学刻蚀面的氮化镓基激光器的制造和表征。
6. On the importance of cavity-length and heat dissipation in GaN-based vertical-cavity surface-emitting lasers [O] . W. J. Liu, X. L. Hu, L. Y. Ying, -1

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7. Edge-Coupling of O-Band InP Etched-Facet Lasers to Polymer Waveguides on SOI by Micro-Transfer-Printing [O] . Ruggero Loi, Steven Kelleher, Raja Fazan Gul, 2020

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Characterization of etched facets for GaN-based lasers

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