Liquid phase silicon at the front of crystallization during SiC PVT growth

R.V.Drachv; G.D.Straty; D.I.Cherednichenko

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Liquid phase silicon at the front of crystallization during SiC PVT growth

机译：SiC PVT生长过程中结晶前端的液相硅

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Formation of liquid phase silicon at the growth front during the process of SiC PVT growth is considered to be among the factors leading to the formation of structural defects in SiC.A brief thermodynamic analysis of the Si liquid phase development was carried out in the temperature range of 1500-3150K. The possibility of Si liquid phase formation at the seeding surface during SiC PVT growth has been experimentally demonstrated.

机译：SiC PVT生长过程中在生长前沿形成液相硅被认为是导致SiC中结构缺陷形成的因素之一。在温度范围内对Si液相发展进行了简要的热力学分析1500-3150K。实验证明了在SiC PVT生长过程中在晶种表面形成硅液相的可能性。

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《Journal of Crystal Growth》 |2001年第3期|p.541-547|共7页
作者
R.V.Drachv; G.D.Straty; D.I.Cherednichenko;
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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类晶体学;
关键词
Defects; Growth from vapor; Seed crystals;

机译：缺陷;蒸气生长;晶种;

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Liquid phase silicon at the front of crystallization during SiC PVT growth

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