Carbonization process of Si(100) by ion-beam bombardment

Meiyong Liao; Chunlin Chai; Zhenyu Yao

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Carbonization process of Si(100) by ion-beam bombardment

机译：Si（100）的离子束轰击碳化

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摘要

The evolution of carbonization process on Si as a function of ion dose has been carried out by mass-selected ion- beam deposition technique. 3C-SiC layer has been obtained at low ion dose, which has been observed by reflection high energy electron diffraction and X-ray photoelectron spectroscopy (XPS).The chemical states of Si and carbon have also been examined as a function of ion dose by XPS. Carbon enrichment was found regardless of the used ion dose here, which may be due to the high deposition rate.

机译：通过质量选择的离子束沉积技术已经进行了碳化过程中Si随离子剂量的变化。通过反射高能电子衍射和X射线光电子能谱（XPS）观察到了低离子剂量的3C-SiC层。 XPS。无论此处使用的离子剂量如何，都发现碳富集，这可能是由于高沉积速率所致。

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来源
《Journal of Crystal Growth》 |2001年第3期|p.446-450|共5页
作者
Meiyong Liao; Chunlin Chai; Zhenyu Yao;
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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类晶体学;
关键词
Diffusion; Growth models; Ion bombardment;

机译：扩散;增长模型;离子轰击;

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2. Gas-Cluster Ion-Beam Smoothing of Chemo-Mechaical-Polish Processed GaSb(100) Substrates [J] . L.P. Allen, T.G. Tetreault, C. Santeufemio, Journal of Electronic Materials . 2003,第8期

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Carbonization process of Si(100) by ion-beam bombardment

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