Investigations on the undersaturated liquid phase epitaxial growth of Al_xGa_(1-x)As

K. Jeganathan; R.S. Qhalid Fareed; K. Baskar; P. Ramasamy; J. Kumar

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Investigations on the undersaturated liquid phase epitaxial growth of Al_xGa_(1-x)As

机译：Al_xGa_（1-x）As不饱和液相外延生长的研究

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Al_xGa_(1-x)As hetero-epitaxial layers have been realised from undersaturated Al/Ga/GaAs melt using liquid-phase epitaxy (LPE). We have not observed any change of layer thickness after a certain period of isothermal contact of GaAs(l 0 0) substrate with an undersaturated melt. Theoretically, we have demonstrated that a small change in the interfacial energy between the substrate and melt provides the driving force for Al_xGa_(1-x)As heteroepitaxial layers. AFM image reveals the atomic flat terraces running parallel to the (110) direction. The grading of aluminium composition from surface to interface has been confirmed using photoelectron spectroscopy. Details on the growth conditions and on the characterisation results are presented.

机译：Al_xGa_（1-x）As异质外延层已使用液相外延（LPE）从不饱和的Al / Ga / GaAs熔体实现。 GaAs（l 0 0）衬底与不饱和熔体经过一定时间的等温接触后，我们还没有观察到层厚度的任何变化。从理论上讲，我们已经证明，基板和熔体之间的界面能的微小变化为Al_xGa_（1-x）As异质外延层提供了驱动力。 AFM图像揭示了平行于（110）方向延伸的原子平坦平台。使用光电子能谱已经证实了铝成分从表面到界面的分级。给出了有关生长条件和表征结果的详细信息。

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来源
《Journal of Crystal Growth》 |2000年第2期|p.29-34|共6页
作者
K. Jeganathan; R.S. Qhalid Fareed; K. Baskar; P. Ramasamy; J. Kumar;
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作者单位

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类晶体学;
关键词
LPE; undersaturation; AFM and XPS;

机译：LPE;不饱和;AFM和XPS;

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Investigations on the undersaturated liquid phase epitaxial growth of Al_xGa_(1-x)As

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