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首页> 外文期刊>Journal of Crystal Growth >Growth and investigation of thermoelectric properties of Bi-Sb alloy single crystals
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Growth and investigation of thermoelectric properties of Bi-Sb alloy single crystals

机译:Bi-Sb合金单晶的生长与热电性能研究

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摘要

Te doped Bi-Sb alloys single crystals were grown by the Czochralski method with Sb feed and with different orientations. The distribution of Sb and Te was investigated along and across the section of single crystals. Concentration and mobility of electrons were measured using magnetoplasma method. Thermoelectric and magneto-thermoelectric properties of the alloys were measured in the temperature range of 90-300 K in magnetic fields between 0.1 and 1.2 T.
机译:通过Czochralski方法用Sb进料和不同取向生长Te掺杂的Bi-Sb合金单晶。 Sb和Te的分布沿整个单晶截面进行了研究。电子的浓度和迁移率使用磁等离子体法测量。在90至300 K的温度范围内,0.1至1.2 T的磁场中测量了合金的热电和磁热电性能。

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