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首页> 外文期刊>Journal of Crystal Growth >Bulk GaN single-crystals growth
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Bulk GaN single-crystals growth

机译：体GaN单晶生长

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摘要

Gallium nitride powder was prepared from gallium and ammonia at temperatures of 1000-1200℃. Parameters of the crystallographic lattice as well as photoluminescence and Raman spectra were determined for the obtained powder. As a result of GaN powder sublimation, GaN single crystals of 3 x 2 x 0.2 mm were received, at temperatures 1200-1250℃. Single crystals of gallium nitride were also synthesised in a reaction of gallium vapours with ammonia. Crystals up to 1.5 x 1 x 0.1 mm were obtained at the temperature range of 850-1150℃. The obtained single crystals were studied by X-ray methods resulting in structure refining, mapping of reflexes and rocking curves. In addition, Raman spectroscopy studies and conductivity measurements were carried out. It was also demonstrated that the crystallographic structure of the crystals and powders was well pronounced. Homoepitaxial GaN films of several tens of micrometers were deposited onto selected GaN single crystals. The influence of grain size on the GaN sublimation process was studied. The 50-500 μm GaN crystalline powder sublimation resulted in the growth of single crystals whose quality was significantly better in comparison to effects of the sublimation of a few micrometer crystalline powder.
机译：氮化镓粉末是由镓和氨在1000-1200℃的温度下制备的。测定所得粉末的晶格参数以及光致发光和拉曼光谱。 GaN粉末升华的结果是，在1200至1250℃的温度下收到了3 x 2 x 0.2 mm的GaN单晶。氮化镓的单晶也在镓蒸气与氨的反应中合成。在850-1150℃的温度范围内可获得1.5 x 1 x 0.1 mm的晶体。通过X射线方法对获得的单晶进行了研究，以进行结构细化，反射映射和摇摆曲线。此外，还进行了拉曼光谱研究和电导率测量。还证明了晶体和粉末的晶体结构非常明显。将几十微米的同质外延GaN膜沉积到选定的GaN单晶上。研究了晶粒尺寸对GaN升华过程的影响。 50-500μmGaN结晶粉末的升华导致单晶的生长，与几微米结晶粉末的升华效果相比，其质量明显更好。

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