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首页> 外文期刊>Journal of Crystal Growth >Fabrication and optical study of quantum dots, quantum wires and quantum wells of Ⅱ-Ⅵ diluted magnetic semiconductors
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Fabrication and optical study of quantum dots, quantum wires and quantum wells of Ⅱ-Ⅵ diluted magnetic semiconductors

机译：Ⅱ-Ⅵ稀磁半导体的量子点，量子线和量子阱的制备和光学研究

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摘要

Nanometer-scale structures of Ⅱ-Ⅵ diluted magnetic semiconductors were synthesized by the microfabrication techniques. Quantum dots of Cd_(1-x)Mn_xSe (x = 0.03) with diameters of 9.0-9.4nm were grown by the self-organized mode in the molecular beam epitaxy. Quantum wires of Cd_(1-x)Mn_xSe (x = 0.08) were synthesized with the width of 60-125 nm from the two-dimensional quantum wells by the electron beam lithography and chemical etching. The optical properties and the exciton dynamics of these quantum structures were studied by the transient photoluminescence spectroscopy. The magneto-optical properties of the confined excitons in the quantum dots, the wires and the wells are discussed.
机译：通过微细加工技术合成了Ⅱ-Ⅵ级稀磁半导体的纳米尺度结构。在分子束外延中通过自组织模式生长了直径为9.0-9.4nm的Cd_（1-x）Mn_xSe（x = 0.03）的量子点。通过电子束光刻和化学蚀刻从二维量子阱合成了宽度为60-125 nm的Cd_（1-x）Mn_xSe（x = 0.08）量子线。通过瞬态光致发光光谱研究了这些量子结构的光学性质和激子动力学。讨论了量子点，导线和阱中受限激子的磁光特性。

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